EDFA232A2PD-GD-F-R Allicdata Electronics
Allicdata Part #:

EDFA232A2PD-GD-F-R-ND

Manufacturer Part#:

EDFA232A2PD-GD-F-R

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 16G PARALLEL 800MHZ
More Detail: SDRAM - Mobile LPDDR3 Memory IC 16Gb (512M x 32) P...
DataSheet: EDFA232A2PD-GD-F-R datasheetEDFA232A2PD-GD-F-R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (512M x 32)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Description

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EDFA232A2PD-GD-F-R is a type of memory whose application field and working principle knowledge will be discussed in the following.

Application Field

In general, EDFA232A2PD-GD-F-R is a type of dynamic random access memory (DRAM) with asynchronous operation, suitable for synchronous memory interfaces. Its typical application is dynamic memory interface communication in advanced computing. It can be used to gain high computation throughput and memory system performance. The EDFA232A2PD-GD-F-R is especially suitable for high-speed systems where latency and throughput are both exceptionally important.

Working Principle

EDFA232A2PD-GD-F-R memory works by means of capacitors and transistors, allowing it to store up to 16 bits of data. It is built on a CMOS platform and uses static random access memory (SRAM) as its basic building block. Around this SRAM core, EDFA232A2PD-GD-F-R DRAM adds additional transistors and capacitors to form an array. Each capacitor in the array is connected to one transistor, known as the “switch”. An electrical charge is always stored inside the capacitor and can be retrieved through the transistor. A small number of surrounding transistors are used for back biasing, pre-charging and post-charging purposes.

The EDFA232A2PD-GD-F-R memory relies on the charge stored in the capacitor to remain in a certain state between frequent refreshes. When accessing a certain point in the array, the circuitry (the “switch”), detects the presence of the electrical charge and activates a set of connected transistors. Refreshing is commonly needed due to the differences in temperature and electrical leakage, leading to data corruption, while the frequency of refreshing may vary depending on the memory type.

Conclusion

EDFA232A2PD-GD-F-R is a type of dynamic random access memory (DRAM) suitable for high-speed systems where latency and throughput are both exceptionally important. Its main components consist of transistors connected to capacitors, allowing it to store up to 16 bits of information. The EDFA232A2PD-GD-F-R memory stores data by utilizing the charge stored in the capacitors and refreshing the memory to prevent data corruption due to environmental and electrical discrepancies. Due to its potentially high read/write speeds and wide application field, EDFA232A2PD-GD-F-R memory is a go-to solution for those looking for advanced computing solutions.

The specific data is subject to PDF, and the above content is for reference

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