EDW4032BABG-50-F-D Allicdata Electronics
Allicdata Part #:

EDW4032BABG-50-F-D-ND

Manufacturer Part#:

EDW4032BABG-50-F-D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC RAM 4G PARALLEL 1.25GHZ
More Detail: SGRAM - GDDR5 Memory IC 4Gb (128M x 32) Parallel 1...
DataSheet: EDW4032BABG-50-F-D datasheetEDW4032BABG-50-F-D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR5
Memory Size: 4Gb (128M x 32)
Clock Frequency: 1.25GHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.31 V ~ 1.65 V
Operating Temperature: 0°C ~ 95°C (TC)
Description

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Memory is a key component of modern computing, allowing for the storage and retrieval of large amounts of data. The EDW4032BABG-50-F-D is a memory module from Samsung’s EDC (Electronic Data Center) family. It is a high-performance, low-power 8Gbit DDR3 SDRAM module engineered for server and enterprise data centers. This article looks at the application field and working principle of the EDW4032BABG-50-F-D memory module.

Application Field

The EDW4032BABG-50-F-D memory module is designed for use in server and enterprise data centers, where performance, reliability and power efficiency are of utmost importance. It is built with the EDC (Electronic Data Center) architecture, which utilizes advanced SerDes (Serially Deserialize) technology to maximize data transfer rates. The EDC architecture also brings enhanced features, including power/temperature sensors, I/O link guard, advanced error correction, and thermal management. This combination of features makes the EDW4032BABG-50-F-D memory module well suited for use in mission critical applications, such as Big Data analytics, database and transaction processing, cloud computing, and business intelligence.

Working Principle

The EDW4032BABG-50-F-D memory module is based on the DRAM architecture. It is made up of several 8Gbit memory chips connected to each other using a Bus configuration to form a single, unified module. All the individual chips can communicate with each other simultaneously and data can be read or written in any order. The memory controller transfers data to and from the memory chips. It is responsible for handling commands, addresses, and data transfers between the memory chips and the processor. When the memory controller receives a read command, it accesses the addressed spot in the memory chips, retrieves the data, and sends it back to the processor. Conversely, when a write command is issued, the controller writes data to the addressed location in the memory chips.

The EDW4032BABG-50-F-D memory module supports a maximum data transfer rate of 1600MT/s (million transfers per second). This high transfer rate helps to improve system performance and increase efficiency. Additionally, the module is built with ECC (error-correction code) which helps to detect and correct errors in memory access. The EDW4032BABG-50-F-D also supports self-refresh and snapshot modes, which helps to reduce power consumption when the system is idle. Finally, the module utilizes thermal management technology to reduce heat generation and improve the module’s life span.

The EDW4032BABG-50-F-D memory module from Samsung’s EDC family is a powerful and efficient solution for server and enterprise data centers. It utilizes the latest DRAM architecture, advanced SerDes technology and a variety of features to provide highest performance with lowest power consumption. The module also features built-in error correction, thermal management, and power/temperature sensors for improved reliability. This combination of features makes the EDW4032BABG-50-F-D memory module an ideal choice for mission-critical applications.

The specific data is subject to PDF, and the above content is for reference

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