Allicdata Part #: | EDW4032CABG-50-N-F-D-ND |
Manufacturer Part#: |
EDW4032CABG-50-N-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC RAM 4G PARALLEL 1.25GHZ FBGA |
More Detail: | SGRAM - GDDR5 Memory IC 4Gb (128M x 32) Parallel 1... |
DataSheet: | EDW4032CABG-50-N-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | RAM |
Technology: | SGRAM - GDDR5 |
Memory Size: | 4Gb (128M x 32) |
Clock Frequency: | 1.25GHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.31 V ~ 1.39 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
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Memory technologies are becoming increasingly prevalent in the computing industry as they enable businesses to better manage their data and store large amounts of information. One of the most popular memory technologies used today is the EDW4032CABG-50-N-F-D. This memory technology is designed to offer improved efficiency and reliability for a wide range of applications.
The EDW4032CABG-50-N-F-D memory technology is a Flash memory device that features a 32-bit wide bus interface and a 32-bit address bus. It is available in two form factors, one with a 160-pin SODIMM socket and one with a 169-pin PGA socket. The storage capacity of the EDW4032CABG-50-N-F-D memory is 32 gigabytes, which makes it ideal for applications such as digital video recorders and medical imaging equipment. It also has a durable, low-profile design that is perfect for space-constrained applications.
The EDW4032CABG-50-N-F-D memory offers a high degree of reliability and performance. It is designed to operate at frequency speeds of up to 833 MHz and provide speeds of up to 5.3 Gb/s. This memory technology is also designed to operate in temperatures ranging from -40°C to +85°C, making it ideal for industrial, automotive and military applications. The EDW4032CABG-50-N-F-D memory also has built-in ECC support and self-testing capabilities, which further enhances its reliability.
The working principle of the EDW4032CABG-50-N-F-D memory is based on semiconductor technology. The memory cells are structured as a Metal-Oxide Semiconductor (MOS) device. MOS memory cells are composed of two transistor-like elements called p-field effect transistors (PFETs) and n-field effect transistors (NFETs). These two transistors are connected in an inverter, which produces two complementary outputs. When a data write command is sent, the MFETs and NFETs open and close according to the data, thus storing the desired data.
The EDW4032CABG-50-N-F-D memory has a wide range of applications in various industries. It is used in many medical imaging applications, including portable and handheld imaging systems, as well as in military and aerospace applications. It is also used in industrial automation systems and is used as flash storage for embedded systems. This memory technology is also commonly used in digital video recorders, personal digital assistants, and other applications that require data storage.
In conclusion, the EDW4032CABG-50-N-F-D memory offers a reliable and high-performance memory solution for a wide range of applications. Its 32-bit wide bus interface and 32-bit address bus allow it to be used in many applications. With its durable, low-profile design and self-testing capabilities, the EDW4032CABG-50-N-F-D memory provides a reliable memory solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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