EDW4032BABG-60-F-D

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory devices, such as the EDW4032BABG-60-F-D, are essential components of the modern day computer. These memories provide temporary storage of data and instructions which can be accessed quickly by the processor. Without these storage solutions, the system performance and program capabilities would be severely hindered. This article will provide an overview of the EDW4032BABG-60-F-D, including its application field and working principle.

Overview and Application Field

The EDW4032BABG-60-F-D is a Synchronous Dynamic Random Access Memory (SDRAM), manufactured by Elpida Memory America. This particular device has a capacity of 512 megabits, and is produced using 0.2-micron mirror-bit technology. It is also available in 3.3V or 2.5V power supply options. The EDW4032BABG-60-F-D is a popular choice for systems with high-speed parallel data transfer capabilities, because of its high speed and low power operation. The device has a maximum clock rate of 100MHz, allowing it to transfer up to 800 megabits per second. It is also capable of automatic burst transfers, allowing it to reduce memory access latency. This enables it to be an ideal memory device for high performance applications, such as embedded controllers and graphics systems.

Working Principle

In order to understand the functioning of the EDW4032BABG-60-F-D, it is helpful to consider its inner workings. The memory device is composed of five main sub-components: the synchronous DRAM array, the row address processing unit, the column access multiplexer, the I/O registers and buffers, and the control logic. The synchronous DRAM array is used to store data, and is composed of addressable columns and rows. The row address processing unit is responsible for decoding the address and locating the required memory cells. The column access multiplexer is used to decode the column address. The I/O registers are used to store the data that is going to be read or written, while the control logic is used to activate the read and write commands.

The EDW4032BABG-60-F-D features an advanced on-die termination (ODT) system, which allows the device to remain stable during high frequency operation. It uses a similar system to the ZQ Calibration routine found in DDR3 memory devices, which is used to increase the signal integrity at the output pins. In addition to this, the device also uses row advance precharge, which quickly precharges the row lines after a read or write operation is completed. This allows for faster row activation for the next operation. It also has advanced power control features such as power-down modes and clock gating, which help reduce power consumption when the device is idle.

Conclusion

The EDW4032BABG-60-F-D memory device is a powerful and efficient memory solution for high-speed parallel data transfer applications. It features advanced technologies such as the ODT system and row advance precharge, allowing it to achieve high performance while consuming minimal power. The device also has a wide range of power supply options, making it suitable for a variety of systems. Thus we can see that, in terms of application and performance, the EDW4032BABG-60-F-D is an ideal choice for high-performance memory requirements.

The specific data is subject to PDF, and the above content is for reference