Allicdata Part #: | EDW4032CABG-50-N-F-RTR-ND |
Manufacturer Part#: |
EDW4032CABG-50-N-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC RAM 4G PARALLEL 1.25GHZ FBGA |
More Detail: | SGRAM - GDDR5 Memory IC 4Gb (128M x 32) Parallel 1... |
DataSheet: | EDW4032CABG-50-N-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | RAM |
Technology: | SGRAM - GDDR5 |
Memory Size: | 4Gb (128M x 32) |
Clock Frequency: | 1.25GHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.31 V ~ 1.39 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
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Memory
EDW4032CABG-50-N-F-R TR is a type of memory that is used for various purposes. It is a non-volatile memory, and can be used for storing information that needs to be stored for long periods of time. The memory is available in different sizes and can be used in a variety of different ways.
The application field of the EDW4032CABG-50-N-F-R TR memory is quite broad and includes applications of laptops, servers, storage systems, devices, and industrial equipment. It is also used for automotive systems, wearables, communication systems, and medical equipment. This type of memory is highly reliable and has a broad lifespan, which makes it ideal for the aforementioned applications.
In regards to the working principle, EDW4032CABG-50-N-F-R TR memory operates in a read write mode. To write data to the memory, a voltage is applied to a pair of word lines associated with target memory cells. The memory cells will then release stored electrons, or alternatively supply new electrons, depending on the type of data being stored. To read data from the memory, the voltage of the word lines associated with the memory cells are checked. This information can then be fetched from the memory cells.
In addition to the read write mode, EDW4032CABG-50-N-F-R TR memory also supports a refresh mode operation. During a refresh cycle, the memory cells are powered with a refresh voltage and the state of the memory cells is then checked. For any memory cells that have been affected by changes in voltage due to evaluation or write operations, the affected memory cells are reset and the content stored in them is rewritten.
The EDW4032CABG-50-N-F-R TR memory is a great choice for a myriad of applications and is highly reliable thanks to its stability, longevity, and read write mode operation. It can store a wide variety of data and its refresh mode operation further ensures that data is kept accurate and up-to-date. With its broad application field and wide range of uses, this type of memory should be considered for various applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EDW4032CABG-50-N-F-D | Micron Techn... | 0.0 $ | 1000 | IC RAM 4G PARALLEL 1.25GH... |
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