Allicdata Part #: | EDW4032BABG-70-F-RTR-ND |
Manufacturer Part#: |
EDW4032BABG-70-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC RAM 4G PARALLEL 170FBGA |
More Detail: | SGRAM - GDDR5 Memory IC 4Gb (128M x 32) Parallel 1... |
DataSheet: | EDW4032BABG-70-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | RAM |
Technology: | SGRAM - GDDR5 |
Memory Size: | 4Gb (128M x 32) |
Clock Frequency: | 1.75GHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.31 V ~ 1.65 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 170-TFBGA |
Supplier Device Package: | 170-FBGA (12x14) |
Description
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Memory: EDW4032BABG-70-F-R TR Application Field and Working Principle
Memory is essential in modern computers and other electronic devices, and a variety of memory technologies are employed to store data. EDW4032BABG-70-F-R TR is an embedded dynamic random access memory (DRAM) that is widely used in computing and consumer electronics. This article will explain the characteristics and applications of EDW4032BABG-70-F-R TR, as well as its working principle.Overview of EDW4032BABG-70-F-R TR
EDW4032BABG-70-F-R TR is a 32Mbit DRAM with an access time of 70ns. It features a burst length of 4 to 8 and a speed rated at 70ns (70MHz). The clock frequency is at 70MHz, providing a data rate of 28Mbps on burst operation. EDW4032BABG-70-F-R TR consumes low power and is widely used in embedded memory applications.Characteristics of EDW4032BABG-70-F-R TR
The EDW4032BABG-70-F-R TR has a commonly used 40-pin small-outline dual in-line memory module (72-ball fine-pitch) package, which is suitable for a variety of applications. It is organized as four banks of 1M x 16 bits, with a maximum of 256K x 16 words. The EDW4032BABG-70-F-R TR has a 5-volt operating temperature range of -55℃ to +125℃, making it more suitable for a wide range of applications.In terms of refresh cycles, EDW4032BABG-70-F-R TR has a refresh cycle of 15.6 microseconds and a refresh interval of 4K cycles/64ms. It can be refreshed in any address order, which is suitable for embedded applications. In addition, the EDW4032BABG-70-F-R TR also has a design of advanced self-refresh and On-chip RAS-only refresh, which can be used to reduce power consumption and improve system performance.Applications of EDW4032BABG-70-F-R TR
Due to its low power consumption, wide operating temperature, fast data transfer speed, suitability for a variety of applications, as well as advanced self-refresh and On-chip RAS-only refresh, EDW4032BABG-70-F-R TR is widely used in embedded memory applications. Such applications include networking equipment, digital consumer electronics, smart-cards, personal digital assistants (PDAs), wireless systems, etc. EDW4032BABG-70-F-R TR can also be used in portable battery-operated systems and other applications that require low power and wide temperature range.Working Principle of EDW4032BABG-70-F-R TR
EDW4032BABG-70-F-R TR is a volatile memory and requires a continuous refresh to keep the data intact. The refresh cycle of the EDW4032BABG-70-F-R TR is 15.6 microseconds with a refresh interval of 4K cycles/64ms. The EDW4032BABG-70-F-R TR can be refreshed in any address order, with the refreshing module providing the reference and data signals to the refresh logic. The refresh logic does the refresh command and data refresh count. The refresh counter counts the refresh cycles and refreshes the memory once the count reaches a certain value.In addition, the EDW4032BABG-70-F-R TR has an advanced self-refresh and On-chip RAS-only refresh design. In the advanced self-refresh mode, the EDW4032BABG-70-F-R TR relies on an external signal to enter the self-refresh mode, or simply by using the self-refresh command. In the On-chip RAS-only refresh mode, the EDW4032BABG-70-F-R TR uses the RAS signal to control the refresh logic to do the refresh operation once every 64ms. It is more power-saving than other refresh methods since only one signal is used to control the refresh process.Conclusion
EDW4032BABG-70-F-R TR is an embedded dynamic random access memory (DRAM) that is widely used in computing and consumer electronics. It has low power consumption, wide operating temperature, fast data transfer speed, suitability for a variety of applications, as well as advanced self-refresh and On-chip RAS-only refresh design. As such, EDW4032BABG-70-F-R TR is suitable for embedded memory applications such as networking equipment, digital consumer electronics, smart-cards, personal digital assistants (PDAs), wireless systems, etc. Moreover, its working principle relies on the continuous refresh to keep the data intact, and an advanced self-refresh and On-chip RAS-only refresh can be used to reduce power consumption and improve system performance.The specific data is subject to PDF, and the above content is for reference
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