Allicdata Part #: | EL817(M)(B))-VG-ND |
Manufacturer Part#: |
EL817(M)(B))-VG |
Price: | $ 0.08 |
Product Category: | Isolators |
Manufacturer: | Everlight Electronics Co Ltd |
Short Description: | OPTOISOLTR 5KV TRANSISTOR 4-DIP |
More Detail: | Optoisolator Transistor Output 5000Vrms 1 Channel ... |
DataSheet: | EL817(M)(B))-VG Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.06993 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Number of Channels: | 1 |
Voltage - Isolation: | 5000Vrms |
Current Transfer Ratio (Min): | 130% @ 5mA |
Current Transfer Ratio (Max): | 260% @ 5mA |
Turn On / Turn Off Time (Typ): | -- |
Rise / Fall Time (Typ): | 6µs, 8µs |
Input Type: | DC |
Output Type: | Transistor |
Voltage - Output (Max): | 80V |
Current - Output / Channel: | 50mA |
Voltage - Forward (Vf) (Typ): | 1.2V |
Current - DC Forward (If) (Max): | 60mA |
Vce Saturation (Max): | 200mV |
Operating Temperature: | -55°C ~ 110°C |
Mounting Type: | Through Hole |
Package / Case: | 4-DIP (0.400", 10.16mm) |
Supplier Device Package: | 4-DIP |
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Optoisolators are electronic components that are used to isolate an electric current path while providing both power and signal isolation. The EL817(M)(B))-VG is a type of optoisolator specifically optimized for simple transistor, photovoltaic output applications. It is a 4-pin device with a built-in photo detector that uses an infrared LED to convert an input signal into an output signal.
The EL817(M)(B))-VG is made up of a gallium arsenide infrared LED, a silicon photovoltaic detector, a 4-pin package and a zinc oxide trigger. This device is widely used in devices and systems that require a high-speed, low-power optoisolator. It is designed to provide minimal distortion while isolating a signal, and is ideal for applications in lighting, industrial, medical, home automation and consumer electronics.
The working principle of the EL817(M)(B))-VG is simple. An input signal is sent to the LED. This signal contains a voltage between 0.5V and 28V, a current of 300mA, and an activation energy of 4.4V. The LED then produces an infrared light, which is then detected by the photovoltaic detector. This detector then produces a voltage spike that is detected by the zinc oxide trigger. This triggers the internal signal that is then sent to the output.
The EL817(M)(B))-VG is designed with a built-in hysteresis that allows it to accurately produce an output signal without distortion. It is also designed to withstand electric shock, vibration, and EMC noise. This makes it suitable for installation in various harsh environments such as those found in industrial and automotive applications.
In conclusion, the EL817(M)(B))-VG is a highly reliable optoisolator designed specifically for simple transistor, photovoltaic output applications. It is made up of a gallium arsenide infrared LED, a silicon photovoltaic detector, a 4-pin package and a zinc oxide trigger. Its working principle is based on the transmission of an LED signal to a photovoltaic detector which then produces a voltage spike that is detected by the zinc oxide trigger. Due to its high-speed and low-power requirements, it is perfect for a variety of applications in lighting, industrial, medical, home automation and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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