EL817(M)(B))-VG Allicdata Electronics
Allicdata Part #:

EL817(M)(B))-VG-ND

Manufacturer Part#:

EL817(M)(B))-VG

Price: $ 0.08
Product Category:

Isolators

Manufacturer: Everlight Electronics Co Ltd
Short Description: OPTOISOLTR 5KV TRANSISTOR 4-DIP
More Detail: Optoisolator Transistor Output 5000Vrms 1 Channel ...
DataSheet: EL817(M)(B))-VG datasheetEL817(M)(B))-VG Datasheet/PDF
Quantity: 1000
1000 +: $ 0.06993
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 130% @ 5mA
Current Transfer Ratio (Max): 260% @ 5mA
Turn On / Turn Off Time (Typ): --
Rise / Fall Time (Typ): 6µs, 8µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.2V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 200mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Package / Case: 4-DIP (0.400", 10.16mm)
Supplier Device Package: 4-DIP
Description

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Optoisolators are electronic components that are used to isolate an electric current path while providing both power and signal isolation. The EL817(M)(B))-VG is a type of optoisolator specifically optimized for simple transistor, photovoltaic output applications. It is a 4-pin device with a built-in photo detector that uses an infrared LED to convert an input signal into an output signal.

The EL817(M)(B))-VG is made up of a gallium arsenide infrared LED, a silicon photovoltaic detector, a 4-pin package and a zinc oxide trigger. This device is widely used in devices and systems that require a high-speed, low-power optoisolator. It is designed to provide minimal distortion while isolating a signal, and is ideal for applications in lighting, industrial, medical, home automation and consumer electronics.

The working principle of the EL817(M)(B))-VG is simple. An input signal is sent to the LED. This signal contains a voltage between 0.5V and 28V, a current of 300mA, and an activation energy of 4.4V. The LED then produces an infrared light, which is then detected by the photovoltaic detector. This detector then produces a voltage spike that is detected by the zinc oxide trigger. This triggers the internal signal that is then sent to the output.

The EL817(M)(B))-VG is designed with a built-in hysteresis that allows it to accurately produce an output signal without distortion. It is also designed to withstand electric shock, vibration, and EMC noise. This makes it suitable for installation in various harsh environments such as those found in industrial and automotive applications.

In conclusion, the EL817(M)(B))-VG is a highly reliable optoisolator designed specifically for simple transistor, photovoltaic output applications. It is made up of a gallium arsenide infrared LED, a silicon photovoltaic detector, a 4-pin package and a zinc oxide trigger. Its working principle is based on the transmission of an LED signal to a photovoltaic detector which then produces a voltage spike that is detected by the zinc oxide trigger. Due to its high-speed and low-power requirements, it is perfect for a variety of applications in lighting, industrial, medical, home automation and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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