EM6K31GT2R Discrete Semiconductor Products |
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Allicdata Part #: | EM6K31GT2RTR-ND |
Manufacturer Part#: |
EM6K31GT2R |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2N-CH 60V 0.25A EMT6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 250mA 120mW Su... |
DataSheet: | EM6K31GT2R Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.05608 |
Input Capacitance (Ciss) (Max) @ Vds: | 15pF @ 25V |
Power - Max: | 120mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | EMT6 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 250mA |
Rds On (Max) @ Id, Vgs: | 2.4 Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
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The EM6K31GT2R is an array consisting of 8 independent N-channel enhancement-mode Field Effect Transistors (FETs) that has been specifically designed for use as high-power switches in various application fields.
The structure of the EM6K31GT2R allows it to be used in two distinct ways. These are Source-to-Drain switching and Source-to-Ground switching. The former is more common and is used to switch the connection between a source (the power supply) and a drain, e.g. the control of load currents or power delivery. The latter is less common, but is occasionally used for special applications, e.g. controlling the ‘ON’ time of the power supply.
The EM6K31GT2R has an electrically isolated, ESD-protected source for each of its FETs, allowing each to be individually controlled by either an analog or digital signal. The transistors can also be switched in series, allowing multiple transistors to be used in parallel to switch higher power currents. This is particularly useful in high-power switching applications, where high power currents of up to several amps are required.
The EM6K31GT2R has a maximum operating voltage of 60V and a maximum drain-source voltage of 57V. It has a maximum drain current of 5.5A and a maximum gate-source voltage of 11V. Its resistance is 39.7Ω and its breakdown voltage is 20V, making it suitable for use in a variety of applications.
The EM6K31GT2R is commonly used in applications such as motor control, DC/DC converters, industrial control, HVAC controllers, power supplies and robotics. In these applications, it is used to switch the power supply between a source and a drain or other load, or to otherwise control high power currents.
The working principle behind the EM6K31GT2R is based on its N-channel MOSFET structure. This structure allows the transistors to be operated by varying the voltage on the gate-source terminal, which drives the channel between source and drain and creates a conduction path for the current. By controlling the voltage on the gate-source terminal, the current that can flow between source and drain can be controlled, thus controlling the power supply.
The EM6K31GT2R is a versatile devices that can be used in a variety of different applications. Its high power handling capabilities and controllability make it an ideal choice for applications where high power currents need to be switched or controlled. Its ESD-protected source also makes it well suited for applications where electrical discharge protection is required.
The specific data is subject to PDF, and the above content is for reference
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