EM6K6T2R Allicdata Electronics

EM6K6T2R Discrete Semiconductor Products

Allicdata Part #:

EM6K6T2RTR-ND

Manufacturer Part#:

EM6K6T2R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET 2N-CH 20V 0.3A EMT6
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 300mA 150mW Su...
DataSheet: EM6K6T2R datasheetEM6K6T2R Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
Base Part Number: *K6
Description

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EM6K6T2R is a semiconductor device made from Silicon that can be used in a variety of applications. It is a junction field-effect transistor (JFET) array with six P-channel JFETs. This type of transistor was developed for high-voltage use and has a low on-state resistance. It is a specialized device used mainly in power supplies and motor control systems.

JFETs are three terminal devices composed of three regions: source, drain and gate. They are used in many applications as they have low power consumption, a wide range of voltage control, and can perform switching operations. The EM6K6T2R offers the advantage of controlling six independent drain voltages using only a single gate voltage. This makes it well suited for applications where the current needs to be controlled independently, such as motor control and power supplies.

The EM6K6T2R works on the principle of a symmetrical voltage-controlled current source with a linear response characteristic. The transistor blocks current flow between the source and the gate until the gate voltage is increased above a certain threshold. This voltage control turns the device on, allowing current to pass through the source-drain circuit.

The EM6K6T2R’s architecture is optimized for power applications, incorporating features such as a reverse-bias safe operating area, a high-temperature operating range, and a floating power supply alignment. It is also capable of handling higher frequencies and has a low capacitance compared to other arrays.

The EM6K6T2R is primarily used in high-voltage power supplies, due to its low on-state resistance, wide control range, symmetrical voltage-control, and low power consumption. It is also used in motor control applications, due to its multi-channel current regulation capabilities. In addition, the EM6K6T2R may be used as a driver or amplifier in general electronics, due to its wide frequency range, low capacitance, and high temperature range.

In summary, the EM6K6T2R is a specialized device used mainly in power supplies and motor control systems. It is an array of six P-channel JFETs with many features that make it well suited for these applications, including its low on-state resistance, symmetrical voltage-control, wide control range, low capacitance, wide frequency range, and high temperature range. The EM6K6T2R is also suitable for use as a driver or amplifier in general electronics.

The specific data is subject to PDF, and the above content is for reference

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