Allicdata Part #: | EMG2DXV5T1G-ND |
Manufacturer Part#: |
EMG2DXV5T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.23W SOT553 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | EMG2DXV5T1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | EMG |
Supplier Device Package: | SOT-553 |
Package / Case: | SOT-553 |
Mounting Type: | Surface Mount |
Power - Max: | 230mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The EMG2DXV5T1G is a Pre-Biased Bipolar Junction Transistor (BJT) Array. It combines two discrete NPN transistors in a single package to reduce board space and cost. The EMG2DXV5T1G is ideal for fast switching applications such as power supplies, audio amplifiers and switching power converters.
The EMG2DXV5T1G is made up of two NPN transistors connected in series. The two transistors are connected at a common emitter terminal which allows them to be used as one device. The two transistors share a common emitter and collector. The two transistors act independently and the collective characteristics of the two devices can be determined by measuring the voltage across the two transistors. This provides a better understanding of the device.
The EMG2DXV5T1G is commonly used in circuits that require a high degree of speed and efficiency. It is often used in high-speed analog circuits, as well as switching power converters, which use the device as a switch. It is also used in audio amplifiers due to its high-speed switching characteristics. The EMG2DXV5T1G is capable of switching at speeds of up to 500kHz, making it perfect for applications requiring fast switching speeds.
The EMG2DXV5T1G is designed with a built-in diode that helps reduce switching losses in the device. This helps to improve the efficiency of the device when it is used in high-speed applications. The device also has a built-in thermal protection that helps to protect the device from overheating.
The EMG2DXV5T1G is available in both surface-mount and through-hole packages. The surface-mount version is ideal for applications where board space is limited, and it can also be used in multi-layer circuit boards, as it has a low profile and is easily adjustable. The through-hole version of the EMG2DXV5T1G is ideal for applications where greater heat dissipation is needed.
The EMG2DXV5T1G has a high current gain of 250 and a collector-emitter voltage of -29V. Its breakdown voltage is -50VDC, which helps to reduce switching losses in the device and allows it to be used in higher power applications. Its higher power ratings and fast switching capabilities make it ideal for use in high power applications.
The EMG2DXV5T1G is an excellent choice for applications that require fast switching speeds and a high degree of efficiency. It can be used in audio amplifiers, switching power converters and high-speed analog circuits, and it can also be used in multi-layer circuit boards for versatility. Its built-in diodes and thermal protection help prolong the life of the device, making it an ideal choice for applications that require a reliable, durable device.
The specific data is subject to PDF, and the above content is for reference
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