Allicdata Part #: | EMG2DXV5T5-ND |
Manufacturer Part#: |
EMG2DXV5T5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.23W SOT553 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | EMG2DXV5T5 Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | EMG |
Supplier Device Package: | SOT-553 |
Package / Case: | SOT-553 |
Mounting Type: | Surface Mount |
Power - Max: | 230mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The EMG2DXV5T5 is a pre-biased array of NPN transistors which has quite a few applications. It is a very powerful component and can be used for a variety of purposes. The pre-biased array is extremely versatile and can be used for high speed switching of electronic signals, providing high-current capability for a wide variety of applications. Additionally, the EMG2DXV5T5 can be used in a wide range of high-power amplification circuits.
The EMG2DXV5T5 is a three-transistor pre-biased array in a single package, with each transistor having a source terminal and two E terminals. The source terminal of each transistor goes to the positive voltage bus, while the two E terminals are cross-coupled, providing two high-current outputs. Additionally, the EMG2DXV5T5 provides reverse polarity protection and current limiting, preventing current spikes that could damage other components or even the whole system.
The EMG2DXV5T5 is capable of carrying up to 300mA of current, making it ideal for high-power applications such as switching power supplies, motor control, and high-power RF amplifiers. Additionally, the EMG2DXV5T5 can provide up to 30V of output voltage to drive line-level signals, making it an ideal pre-biased amplifier stage in audio equipment such as preamps and effects pedals.
The working principle of the EMG2DXV5T5 is based on the use of two transistors that are cross-coupled to provide two high-current outputs. Each transistor has a source terminal connected to the positive voltage bus, while the two E terminals are connected to each other. When a voltage is applied to the source terminal, it causes current to flow from the source to the E terminals, providing a high-current output. This basic principle is used in a wide variety of applications, but is most commonly used for switching power supplies, motor control, and high-power RF amplifiers.
The EMG2DXV5T5 is an extremely powerful component, and can be used to accomplish a wide variety of tasks. It is an ideal choice for those looking to implement high-power applications such as switching power supplies, motor control, and high-power RF amplifiers. Additionally, the EMG2DXV5T5\'s two high-current outputs and reverse polarity protection make it an ideal pre-biased amplifier stage in audio equipment such as preamps and effects pedals.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EMG2T2R | ROHM Semicon... | -- | 1000 | TRANS 2NPN PREBIAS 0.15W ... |
EMG2DXV5T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS 2NPN PREBIAS 0.23W ... |
EMG2DXV5T1G | ON Semicondu... | 0.0 $ | 1000 | TRANS 2NPN PREBIAS 0.23W ... |
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