Allicdata Part #: | EMG2DXV5T5GOSTR-ND |
Manufacturer Part#: |
EMG2DXV5T5G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.23W SOT553 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | EMG2DXV5T5G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.05173 |
16000 +: | $ 0.04717 |
24000 +: | $ 0.04413 |
56000 +: | $ 0.04057 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | EMG |
Supplier Device Package: | SOT-553 |
Package / Case: | SOT-553 |
Mounting Type: | Surface Mount |
Power - Max: | 230mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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EMG2DXV5T5G is a pre-biased array of tiny transistors, and it has various applications. It is commonly used in integrated circuits, and thus it typically finds use in microcontrollers and digital signal processors. This type of transistor is also used in communications and data storage, as it is able to quickly identify signals even in noisy environments. In addition, they can also be used in RF and microwave applications.
Aside from its versatile applications, the EMG2DXV5T5G has several advantages over other types of transistors. It has a low input bias current, for instance, and is able to operate at a very low voltage. Moreover, this device has a maximum on-resistance rating of only 120Ω, making it suitable for applications that require low power consumption. It also offers a very high power density, meaning that it can operate with more waveforms in a smaller area.
The basic working principle of an EMG2DXV5T5G is relatively simple. When a certain voltage is applied to the device\'s gate, a current flows through the source and drain terminals. This current is largely determined by the voltage-to-current ratio or transconductance, which is typically a measure of the efficiency of this type of transistor. The higher the ratio, the larger the current. Furthermore, the EMG2DXV5T5G can minimize the on-resistance further if the voltage applied to the gate is kept low.
The EMG2DXV5T5G also uses a unique design to minimize the effect of circuit noise. By using an insulated gate field-effect transistor (IGFET) technology in its design, the EMG2DXV5T5G can provide improved protection from noise and enhance signal integrity. This type of transistor also reduces the power loss during the signal transmission process.
The EMG2DXV5T5G is a highly bifunctional transistor which is suited for multiple applications in the field of communications, microprocessors and data storage. With its outstanding advantages such as low voltage operation, high power density and a low input bias current, it can provide significant benefits to many electronic systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EMG2DXV5T5G | ON Semicondu... | 0.06 $ | 1000 | TRANS 2NPN PREBIAS 0.23W ... |
EMG2T2R | ROHM Semicon... | -- | 1000 | TRANS 2NPN PREBIAS 0.15W ... |
EMG2DXV5T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS 2NPN PREBIAS 0.23W ... |
EMG2DXV5T1G | ON Semicondu... | 0.0 $ | 1000 | TRANS 2NPN PREBIAS 0.23W ... |
EMG2DXV5T5 | ON Semicondu... | -- | 1000 | TRANS 2NPN PREBIAS 0.23W ... |
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