Allicdata Part #: | EMT18T2R-ND |
Manufacturer Part#: |
EMT18T2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2PNP 12V 0.5A 6EMT |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 50... |
DataSheet: | EMT18T2R Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 200mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 270 @ 10mA, 2V |
Power - Max: | 150mW |
Frequency - Transition: | 260MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | EMT6 |
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The EMT18T2R is a bipolar junction transistor (BJT) array used for linear and digital applications. It consists of two independent NPN transistors in a single package, which enables it to leverage dual-gate applications. The design allows for increased flexibility and performance, while the reduction in size and power consumption yields greater efficiency and cost savings compared to multiple discrete components. Its low capacitance and high current handling capability make it an ideal solution for high-performance switching, logic, audio, and instrumentation designs.
A BJT array is a set of two or more diodes and transistors that are interconnected to form a single circuitry unit. By connecting the components in this way, the array enables improved performance, reliability, and cost-efficiency. Each transistor within the array has its own gate, allowing for fine-tuning of the individual components. This makes it possible to use a single BJT array for a wide range of applications.
The EMT18T2R has two independent NPN transistors that are configured in a dual-gate array. Due to the dual-gate design, the device provides improved switching performance and can handle higher current levels than single-gate BJT arrays. The EMT18T2R is designed with an increased input capacitance, making it well-suited for linear and digital applications that require high performance and speed.
The working principle of the EMT18T2R is simple yet effective. The two NPN transistors are connected to form a single circuitry unit. When a voltage is applied to the gate of the transistor, this changes the conductance of the transistor and thus, the current flow. As the input voltage to the gate varies, the current through the EMT18T2R varies accordingly.
In terms of applications, the EMT18T2R is suitable for a variety of linear and digital designs. When used in linear applications it is great for amplifying weak signals as it has very low capacitance and high current handling capabilities. Alternatively, in digital applications the device is ideal for high-speed switching and logic designs. It is also used in instrumentation processes and audio circuitry.
Overall, the EMT18T2R provides an awesome array of features and benefits. Its low power consumption, increased flexibility and design, and its high-speed performance capabilities make it a great choice for linear and digital applications. Its high-current handling capability means the device is strong enough to power the most demanding circuit designs, while its low capacitance helps ensure that the signals remain pure. As such, the EMT18T2R is a great pick for any circuit that requires a reliable, cost-efficient, and high-performance BJT array.
The specific data is subject to PDF, and the above content is for reference
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