EMT1DXV6T5 Allicdata Electronics
Allicdata Part #:

EMT1DXV6T5-ND

Manufacturer Part#:

EMT1DXV6T5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP 60V 0.1A SOT563
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 10...
DataSheet: EMT1DXV6T5 datasheetEMT1DXV6T5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 500mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Base Part Number: EMT
Description

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Transistors, specifically bipolar junction transistors (BJTs), play a key role in converters, switches, and amplifiers. This is mainly due to their ability to control current in an electrical circuit. The EMT1DXV6T5 is a high performance BJT array, commonly used in applications such as linear and switching power supplies, as well as voltage regulation systems. This section will discuss the application field and working principle of the EMT1DXV6T5.

The EMT1DXV6T5 is a five NPN transistor array that is designed to provide superior performance in switching and linear power supplies. This high performance BJT array is characterized by low saturation voltage and low gate lag, along with high efficiency and low switching losses. It provides high speed switching and excellent linear response in applications such as fast-response power supplies and voltage regulation systems.

In terms of its application field, the EMT1DXV6T5 is often used for current management, voltage regulation, and high speed switching in linear and switching power supplies. It is also used for load-dump protection and over-current protection. Other applications include motor control and robotics, as well as entertainment or industrial systems.

As for the EMT1DXV6T5\'s working principle, it is based on the concept of a single BJT transistor. A BJT is composed of two p-n junctions, between an emitter (E) and a base (B), and between the base and the collector (C). A BJT works because of the combination of two p-n junctions. When a current flows through the emitter-base junction, it allows a current to flow the other way, between the collector and the base. This current "amplifies" the original signal, allowing it to control larger currents.

In the case of the EMT1DXV6T5, it uses five BJTs in an array format, allowing for faster switching speeds and better overall performance. In addition, the use of five transistors provides additional current control and higher levels of current protection.

The EMT1DXV6T5 is an ideal choice for applications that require fast switching and good linear response. It provides superior performance, high efficiency, and low switching losses. This makes it a great choice for applications such as fast-response power supplies and voltage regulation systems.

The specific data is subject to PDF, and the above content is for reference

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