
EMT1DXV6T5G Discrete Semiconductor Products |
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Allicdata Part #: | EMT1DXV6T5GOSTR-ND |
Manufacturer Part#: |
EMT1DXV6T5G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP 60V 0.1A SOT563 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 10... |
DataSheet: | ![]() |
Quantity: | 8000 |
8000 +: | $ 0.05061 |
16000 +: | $ 0.04498 |
24000 +: | $ 0.04217 |
56000 +: | $ 0.03749 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 500mW |
Frequency - Transition: | 140MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Base Part Number: | EMT |
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The EMT1DXV6T5G is a type of Transistors - Bipolar (BJT) - Arrays. Bipolar transistors have two active semiconductor regions, so the current flow between these two regions is bipolar; either electron current or hole current is allowed to flow. Arrays consist of several transistors connected in either a parallel or serial configuration depending on the application.EMT1DXV6T5G is a combination of six individual BJT transistors in a single package. All six transistors are connected together and share the same emitter and collector. The EMT1DXV6T5G has three configurations, in terms of connection, which are the common emitter, common base andcommon collector.
The main application of the EMT1DXV6T5G is for switching and amplifier circuits. In switching applications, it is commonly used as a high speed switch and in amplifier circuits, it is used to amplify the output signal. The working principle of this transistor is based on the basic operation of BJTs. When an input signal is applied to the base, it causes the current to flow between the emitter and collector. The amount of current that flows is determined by the amount of voltage supplied. This voltage determines the amount of gain or amplification that can be achieved. Depending on the application, the EMT1DXV6T5G can be used as an amplifier or switch, as the amount of current can be adjusted to either amplify or switch the output signal.
The EMT1DXV6T5G has several advantages which make it suitable for many applications. These include its high frequency response, low power consumption, high temperature operation and its small package size. These features make it ideal for use in circuits where space is limited and power consumption is critical. In addition, it offers stability and reliability in applications where high frequency stability and reliability are required. In conclusion, the EMT1DXV6T5G is a type of BJT array which is suitable for high speed switching and amplifier circuits. It has many advantages such as high frequency response, low power consumption, and high temperature operation, due to its package size. This makes it ideal for many applications where space and power consumption are of critical importance. The EMT1DXV6T5G also offers stability and reliability in circuits that require these qualities.
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