EMT1DXV6T1 Allicdata Electronics
Allicdata Part #:

EMT1DXV6T1-ND

Manufacturer Part#:

EMT1DXV6T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP 60V 0.1A SOT563
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 10...
DataSheet: EMT1DXV6T1 datasheetEMT1DXV6T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 500mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Base Part Number: EMT
Description

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The EMT1DXV6T1 transistor array is a versatile device designed to provide circuit designers options for increasing the complexity and power of their electrical applications. It consists of two separate and independent NPN transistors, both of which are isolated, which provide the designer with the ability to control two or more distinct devices simultaneously. With this configuration, the designer can maximize the power of their applications while preserving the circuitry\'s power budget.

The EMT1DXV6T1 transistors feature an array of six pressed-down transistors that are arranged together, enabling them to be individually connected and controlled via dedicated pins. Each of the six discrete transistors has an equal on-resistance that provides high power and great flexibility in their implementation and operation. The device also features a low output capacitance and a low input capacitance that make it suitable for high-speed applications. In addition, the transistors are rated for high-voltage operation, up to 35 volts.

The primary purpose of the EMT1DXV6T1 is to provide circuit designers with the ability to create complex circuits. By utilizing the device\'s two independent transistors, the designer is able to simultaneously control two or more devices at the same time. Furthermore, due to the device\'s high power rating and low capacitance values, the designer may use the device in high-speed applications with greater accuracy and efficiency.

The device works by utilizing two or more transistors to source, sink or otherwise switch the desired voltage and current. Each transistor array is rated to exchange signals, meaning the transistors can be used to transmit signals from one circuit to another. Additionally, the device can be used to construct multiple circuits from one device. This provides the designer with unprecedented flexibility when it comes to constructing complex and powerful circuits.

Using the EMT1DXV6T1, the designer is able to increase the complexity and power of their applications through the use of multiple transistors and switching signals between them. By utilizing the device in a proper configuration, the designer can construct high-speed circuits with great accuracy and flexibility, while still abstaining from using too much power from their circuit\'s power budget.

In conclusion, the EMT1DXV6T1 is a powerful and versatile transistor array that provides circuit designers options for increasing the complexity and power of their electrical applications. The device works by utilizing two or more transistors to source, sink or otherwise switch the desired voltage and current. Each transistor array is rated to exchange signals, meaning the transistors can be used to transmit signals from one circuit to another. The device is well suited for high-speed applications, providing the circuit designer with great accuracy and flexibility.

The specific data is subject to PDF, and the above content is for reference

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