EMX1DXV6T1 Allicdata Electronics
Allicdata Part #:

EMX1DXV6T1-ND

Manufacturer Part#:

EMX1DXV6T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN 50V 0.1A SOT563
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 10...
DataSheet: EMX1DXV6T1 datasheetEMX1DXV6T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 500mW
Frequency - Transition: 180MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Description

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EMX1DXV6T1 is a kind of transistor array here in the classification for Transistors - Bipolar (BJT) – Arrays. This kind of transistor array contains the traits of six independent NPN transistors which is built to provide excellent AC and DC performance over all commonly used integrated circuits. The transistor array has a different application field in the way that it completely replaces the part of needing traditional multiple transistors on the circuit board area, and the working principle of this transistor array is mainly some combination of the following.

The first point of the EMX1DXV6T1 transistor array is on the SPICE model. This array has a typical gain of β = 150-280 with 1.3 to 0.7V BE and collector current of 1.5A. The complete array is specified for power dissipation up to 625mW with maximum voltage of 30V. The working principle of the transistor array when it comes to SPICE model is mainly contained in the following basic parameters of the transistor, such as the collector current, the saturation voltage, the DC voltage gain and the on-resistance of the transistor.

The second point of the EMX1DXV6T1 transistor array lies on the output characteristics of the transistor array. The output characteristics transition from cutoff and saturation in the same way it would as a single transistor. The transistor array has a typical output of 15V PP, a typical slew rate of 2V/us, a typical settling time of 15-20ns, a typical source capacitance of 6pF and a typical load capacitance of 4pF. This is all general information on the EMX1DXV6T1 transistor array and the characteristic it has for its output.

The third and last point of the EMX1DXV6T1 transistor array is on the packaging. It has a lead pitch of 0.050 inches, a body size of 0.190 inches, a mounting style of SMD-6, a structure of leadless, a package weight of 0.045 ounces, and a packing of 40 pieces per tray. This is some additional information the EMX1DXV6T1 transistor array has for its packing and it serves to let people know the general capacity it has for the packaging.

In conclusion, the EMX1DXV6T1 transistor array has its application field in the classification of Transistors - Bipolar (BJT) – Arrays and the working principle consists of the main parameters of the SPICE model, the output characteristics and the packaging of the array. The main features of the EMXX1DXV6T1 is that it can completely replace the part of needing traditional multiple transistors on the circuit board area providing an excellent AC and DC performance over all commonly used integrated circuits.

The specific data is subject to PDF, and the above content is for reference

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