EMX1DXV6T1G Discrete Semiconductor Products |
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Allicdata Part #: | EMX1DXV6T1GOSTR-ND |
Manufacturer Part#: |
EMX1DXV6T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN 50V 0.1A SOT563 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 10... |
DataSheet: | EMX1DXV6T1G Datasheet/PDF |
Quantity: | 4000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 500mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Description
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Introduction
EMX1DXV6T1G is a transistor array with six NPN transistors and bipolar junction transistors (BJT). This device is used for applications that require fast switching and high current blocking, such as amplifiers and switching circuits. In addition, it is also suitable for high-speed data communication and signal conditioning applications. This device is easy to use, reliable and has low power consumption, making it suitable for a wide range of applications.Applications
The EMX1DXV6T1G is capable of switching high current and voltage quickly and reliably, making it suitable for use in applications such as switching circuits, amplifiers and power supplies. It is also suitable for use in high-speed data communication systems, digital signal processing, analogue signal conditioning and power management.Working Principle
The EMX1DXV6T1G is made up of six NPN transistors and bipolar junction transistors (BJT). Each NPN transistor acts as a switch, controlling the flow of current between the collector and the emitter. When a voltage is applied to the base of the transistor, it allows current to flow between the collector and the emitter, which in turn allows a current to flow in the circuit. The current is then amplified by the BJT, which is responsible for increasing the amount of current passing through the circuit.Conclusion
EMX1DXV6T1G is a six-transistor array with NPN transistors and bipolar junction transistors (BJT). This device is suitable for applications that require fast switching and high current blocking, such as amplifiers, switching circuits, data communication and signal conditioning. It is easy to use, reliable and has low power consumption, making it an ideal choice for a wide range of applications.The specific data is subject to PDF, and the above content is for reference
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