EMX1DXV6T5G Discrete Semiconductor Products |
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Allicdata Part #: | EMX1DXV6T5GOSTR-ND |
Manufacturer Part#: |
EMX1DXV6T5G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN 50V 0.1A SOT563 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 10... |
DataSheet: | EMX1DXV6T5G Datasheet/PDF |
Quantity: | 8000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 500mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
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The EMX1DXV6T5G is a special class of discrete transistor array, combining six individual NPN transistors into a single microchip. Designed by Diodes and Chips, Inc., the EMX1DXV6T5G is a high-performance surface mount device specifically designed for use in a variety of small electronic projects.
The EMX1DXV6T5G is capable of handling power levels up to 500 milliamps, and features a low saturation voltage drop of only 0.15 volts. Measuring just 1.19 inches x 0.76 inches and just 0.040mm thick, the EMX1DXV6T5G is a miniature package that is capable of fitting into even the tightest electronic assemblies.
The EMX1DXV6T5G is suitable for a range of applications, such as audio amplifiers, instrumentation amplifiers, motor speed controllers, motor control, and other industrial applications. In addition, it is also suitable for use in power supplies, high-frequency circuits, and pulse circuitry.
At its most basic, the EMX1DXV6T5G circuit works by allowing current flow between two points, one of which has a higher voltage and one of which has a lower voltage. The six individual transistors are connected in a "Darlington" configuration, which allows them to act together to amplify the current flowing through them. The resulting output is a strong current that can drive an even stronger voltage, making the EMX1DXV6T5G ideal for use in projects requiring great power output.
The EMX1DXV6T5G makes use of the Darlington configuration to increase the power output of the device. When the transistors are switched "ON", the voltage across them increases, which in turn increases the current flowing through them. This increased current allows the transistors to output more power, thus increasing the total output of the device.
The EMX1DXV6T5G also allows for greater control of the output. By adjusting the base current, the collector-emitter voltage, and the gain of the Darlington configuration, designers can precisely tailor the output of the device to meet the needs of their specific application.
Additionally, the EMX1DXV6T5G also features an "overcurrent protection circuit". This protects the device from damage due to excessive current draw or overheating. If the current draw exceeds the set limit, the "overcurrent protection circuit" will reduce the output current from the device, ensuring its safe operation.
The EMX1DXV6T5G is a highly reliable and versatile transistor array, offering a wide range of excellent power output and superior temperature stability. Thanks to its tiny size, low voltage drop, and overcurrent protection circuitry, this component is perfect for a variety of small applications. Whether you need to add extra power to your audio amplifier or control the speed of your motor, the EMX1DXV6T5G will get the job done.
The specific data is subject to PDF, and the above content is for reference
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