EMX1FHAT2R Allicdata Electronics

EMX1FHAT2R Discrete Semiconductor Products

Allicdata Part #:

EMX1FHAT2RTR-ND

Manufacturer Part#:

EMX1FHAT2R

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NPN+NPN GENERAL PURPOSE AMPLIFIC
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 15...
DataSheet: EMX1FHAT2R datasheetEMX1FHAT2R Datasheet/PDF
Quantity: 1000
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
Description

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Bipolar Junction Transistors (BJTs) are three-terminal devices commonly used in the electronics industry. They come in two basic formats, the NPN and PNP type, and can be used in a variety of applications. One such application is the EMX1FHAT2R, which is an array of BJTs. This article will discuss the application of the EMX1FHAT2R and its working principle.

The EMX1FHAT2R is an array of BJTs specifically designed for radio frequency and power amplifier applications. It consists of 4 NPN transistors connected in an push-pull configuration. Each transistor has a single, central collector terminal and separate emitter and base terminals. With this configuration, four transistors can be driven simultaneously, providing a higher output current than a single device. This makes the EMX1FHAT2R ideal for high-power applications such as radio frequency, audio and power amplifiers.

The EMX1FHAT2R uses the push-pull principle in which two transistors are driven in opposite directions. This produces an increased output current which can be used for amplification purposes. In order for this to work, the transistors must be properly matched. This can be accomplished by selecting devices from the same manufacturing lot, as well as through the choice of components. Once the transistors are matched, they can be driven in either an Class A or Class B configuration. Class A offers the highest efficiency, while Class B has the highest current and voltage rating.

The EMX1FHAT2R also makes use of a built-in thermal feedback mechanism which helps to maintain a stable operation temperature. This is achieved through a process known as thermal biasing. This involves controlling the transistors’ base and emitter current, which in turn regulates the output current and power. This helps to ensure a longer lifespan and greater reliability, even in high-power applications.

The EMX1FHAT2R is an excellent choice for those seeking an efficient and reliable BJT array for their radio frequency, audio and power amplifier applications. By using the push-pull principle and the thermal biasing mechanism, the EMX1FHAT2R offers high efficiency and superior performance. It is also very cost-effective, making it a great value for those on a budget.

In conclusion, the EMX1FHAT2R provides an efficient and reliable solution for those seeking BJT arrays for radio frequency, audio and power amplifier purposes. With its push-pull principle and thermal biasing mechanism, it offers excellent performance and cost-effectiveness. Those looking for efficient and reliable BJT arrays for their projects should definitely consider the EMX1FHAT2R.

The specific data is subject to PDF, and the above content is for reference

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