
Allicdata Part #: | ES2D-M3/52T-ND |
Manufacturer Part#: |
ES2D-M3/52T |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 2A DO214AA |
More Detail: | Diode Standard 200V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.09000 |
10 +: | $ 0.08730 |
100 +: | $ 0.08550 |
1000 +: | $ 0.08370 |
10000 +: | $ 0.08100 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 18pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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ES2D-M3/52T are a single diode rectifier device. They are used in power supplies, rectifier circuits and local battery chargers. These diodes are designed for applications that require high efficiency and low forward voltage drop.
Applications
ES2D-M3/52T are widely used in power supplies, rectifier circuits, local battery chargers, and general rectification applications. This device is designed for applications that require high efficiency and low forward voltage drop. Commonly used in commercial, automotive and industrial control applications, these diodes are capable of carrying up to 52 amps of current with a forward voltage drop of 0.39 volts.
Some applications include battery chargers, power supplies, rectifier circuits, semiconductor heating applications, inductive heating applications and solar panels. These diodes can also be used in electronic ballasts, invertors, and power conditioning systems.
Working Principle
ES2D-M3/52T are current controlled devices that convert electrical current into corresponding voltage drops. As current passes through the diode, a corresponding voltage drop is generated. When the polarity of the applied voltage is in the forward, or conduction, direction, current can flow through the diode, resulting in a voltage drop. When the polarity is reversed, current can not pass through, resulting in a break in the circuit.
The amount of current passed through the diode is determined by the voltage and resistance in the circuit. As voltage increases, the resistance will decrease and more current will be able to pass through, resulting in a larger voltage drop. As the voltage decreases, the resistance will increase and less current will be able to pass through, resulting in a smaller voltage drop.
In addition to controlling the amount of current that can pass through the diode, ES2D-M3/52T also serve as a protection mechanism. As current passes through the diode, a voltage drop is created. If the voltage exceeds the maximum rating of the diode, the diode will shut down, thus protecting the circuit from damage.
Advantages
ES2D-M3/52T have many advantages that make them a popular choice for many types of applications. These diodes are extremely efficient and feature a low forward voltage drop, resulting in a high level of power savings. In addition, they feature a large current handling capacity, enabling them to withstand large currents without damage. Furthermore, they are highly reliable and feature a long service life.
In addition to their power saving capabilities, these diodes are also capable of functioning at high temperatures. This makes them ideal for applications that require high heat dissipation. Finally, they are available in both through-hole and surface-mount packages, making them easily adaptable to a variety of applications.
Disadvantages
Although ES2D-M3/52T have many advantages, there are some disadvantages associated with them as well. They feature a relatively large forward voltage drop, which may result in a decrease in power efficiency in some applications. Additionally, their large current handling capacity is only suitable for applications where high currents are expected.
Finally, these diodes are only available in through-hole and surface-mount packages, making them more difficult to use in certain applications. This may require additional wiring and circuitry to ensure proper functionality.
Conclusion
ES2D-M3/52T are a single diode rectifier device. They are suitable for power supplies, rectifier circuits, and local battery chargers due to their high efficiency and low forward voltage drop. They are also capable of handling large currents, making them suitable for applications requiring a large amount of current flow. These diodes are available in through-hole and surface-mount packages, making them easily adaptable to a variety of applications. However, they may result in a decrease in power efficiency in some applications and their large current handling capacity makes them only suitable for applications where high currents are expected.
The specific data is subject to PDF, and the above content is for reference
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ES2D R5G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
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ES2DA M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D | ON Semicondu... | -- | 51000 | DIODE GEN PURP 200V 2A DO... |
ES2DHE3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DV M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-M3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-TP | Micro Commer... | -- | 3000 | DIODE GEN PURP 200V 2A DO... |
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ES2D-13-F | Diodes Incor... | -- | 9000 | DIODE GEN PURP 200V 2A SM... |
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