
Allicdata Part #: | ES2DM4G-ND |
Manufacturer Part#: |
ES2D M4G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 2A DO214AA |
More Detail: | Diode Standard 200V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 1000 |
6000 +: | $ 0.06737 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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ESD M4G application field and working principle
ESD M4G is a type of protection circuit widely used to protect electronic components from interference caused by electrical overstress (EOS) or electrostatic discharge (ESD).
Application fields
ESD M4G protection circuits are extensively used in all kinds of low-voltage applications, such as power line protection, power supply input protection, battery protection, and ESD control. In the telecommunications industry, it provides protection against lightning strikes and other types of voltages. For example, in the cellular transmission systems, ESD M4G provides protection against lightning strikes and voltage surges.
The most common application of ESD M4G is in the automotive industry. With the increasing complexity of electronic components, ESD M4G plays a crucial role in preventing damage to the integrated circuits from accidental ground faults, rapid noise, and other sources of EOS.
Working Principle
The basic principle behind ESD M4G protection circuits is the use of a capacitive element to absorb the energy of a voltage surge. The capacitor acts as a voltage sink, where a portion of the electric charge is forced onto it. This serves to reduce the voltage of the incoming surge and prevent it from damaging the protected components.
The absorption of energy by the capacitive element is achieved by placing the component in parallel with a current-limiting resistor. The resistor limits the current flow, which decreases the voltage of the incoming surge. The capacitive element absorbs the excess energy, thus protecting the protected components.
The protection provided by ESD M4G is dependent on the design parameters. Generally, it is suitable for providing protection against voltage surges up to 16V. Furthermore, the protector can be adjusted by altering certain components to increase the protection level.
Conclusion
ESD M4G protection circuits are a reliable, low-cost solution to protecting electronic components from EOS and ESD. They can be used for various applications, from power line protection to automotive electronics. The working principle behind ESD M4G protection circuits is based on the use of a capacitive element to absorb energy from a surge and a current-limiting resistor to reduce the voltage. Together, these components offer a reliable and affordable protection solution.
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Part Number | Manufacturer | Price | Quantity | Description |
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ES2D-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A SM... |
ES2DA-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 2A SM... |
ES2DA R3G | Taiwan Semic... | -- | 5400 | DIODE GEN PURP 200V 2A DO... |
ES2DHM4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DPX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A CF... |
ES2DVHR5G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-LTP | Micro Commer... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DHE3J/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DAHR3G | Taiwan Semic... | 0.08 $ | 1800 | DIODE GEN PURP 200V 2A DO... |
ES2D/1 | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DRX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A SO... |
ES2DAF | ON Semicondu... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-E3/52T | Vishay Semic... | -- | 27750 | DIODE GEN PURP 200V 2A DO... |
ES2DVHM4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DV R5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DAHM2G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DA-13-F | Diodes Incor... | -- | 135000 | DIODE GEN PURP 200V 2A SM... |
ES2DTR | SMC Diode So... | 0.06 $ | 1000 | DIODE GEN PURP 200V 2A SM... |
ES2DHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D R5G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DHE3_A/I | Vishay Semic... | -- | 6400 | DIODE GEN PURP 200V 2A DO... |
ES2DA M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D | ON Semicondu... | -- | 51000 | DIODE GEN PURP 200V 2A DO... |
ES2DHE3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DV M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-M3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-TP | Micro Commer... | -- | 3000 | DIODE GEN PURP 200V 2A DO... |
ES2D-E3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DVRX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A SO... |
ES2D-13-F | Diodes Incor... | -- | 9000 | DIODE GEN PURP 200V 2A SM... |
ES2DHE3J_A/H | Vishay Semic... | 0.29 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
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