
Allicdata Part #: | ES2DVHM4G-ND |
Manufacturer Part#: |
ES2DVHM4G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 2A DO214AA |
More Detail: | Diode Standard 200V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 1000 |
6000 +: | $ 0.07629 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The ES2DVHM4G is an ultra-fast recovery diode that has become increasingly popular in their many application fields. Many users will find that this type of diode provides improved performance over conventional Schottky diodes, as well as being cost effective. As a single diode its primary use is in rectifying applications.
An ES2DVHM4G is capable of carrying up to 90 amps of forward current with a maximum reverse voltage of 8V. It has a low forward voltage drop is just 0.45V, making it very efficient in electrical circuits. The diode has a fast recovery time of just 0.2 ns, meaning that no reverse electro-motive force (EMF) will form in the circuit, reducing the need for snubbers or other protection elements.
The ES2DVHM4G is used in a variety of applications such as power conversion, protection circuits, and charging applications. This type of diode is also often found in automotive electrical systems,audio equipment, consumer electronics and communication systems. It is also used in medical equipment and industrial equipment. With its low forward voltage drop and fast recovery time, it is an ideal choice for many rectifying applications.
The working principle of an ES2DVHM4G diode is based on its unique construction. The diode consists of two layers of semiconductor material. The first layer is an n-type material which acts as the cathode, and the second layer is a p-type material which acts as the anode. When the diode is in forward bias, a bias current will flow from the anode to the cathode, which allows for the forward voltage to drop.
The reverse biased configuration works differently, as the electric current from the anode is blocked by the reverse current of the cathode. In this reverse biased configuration, there is no direct path for the electric current and therefore the reverse voltage is blocked. The blocking effect is what makes this type of diode suitable for rectifying applications.
The ES2DVHM4G can also be used in switching applications. Instead of a rectifying circuit, it can be used in a switching configuration by allowing the diode to switch between the two bias currents, allowing for the current to be switched at a very rapid rate. This makes the diode ideal for use in switching power supplies, and many other applications.
Overall, the ES2DVHM4G is an excellent choice for rectifying and switching applications. Its low forward voltage drop and fast recovery time make it highly efficient, and its durable construction make it a good option for all sorts of applications. With its wide range of applications and highly efficient performance, this type of diode is sure to remain popular for many years to come.
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ES2D | ON Semicondu... | -- | 51000 | DIODE GEN PURP 200V 2A DO... |
ES2DHE3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DV M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-M3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
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