Allicdata Part #: | FCA16N60_F109-ND |
Manufacturer Part#: |
FCA16N60_F109 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 16A TO-3P |
More Detail: | N-Channel 600V 16A (Tc) 167W (Tc) Through Hole TO-... |
DataSheet: | FCA16N60_F109 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 167W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2250pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | SuperFET™ |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FCA16N60_F109 is a Field Effect Transistor (FET) designed for use in low to medium power applications. The FCA16N60_F109 is a single-channel, N-channel enhancement mode MOSFET which stands for “Metal-Oxide-Semiconductor Field Effect Transistor.” It is suited for a variety of low to medium power applications, making it a versatile component. It is highly efficient and has a very low on-resistance compared to most FETs.
The FCA16N60_F109 is a single-channel MOSFET, meaning it has one drain, one source, and one gate connection. The device\'s drain and source connections are designed to handle low to medium power applications, with a maximum drain-source voltage of 60 V, 17A of continuous drain current at 25 °C, and a total power dissipation of 62 W. The device\'s low on-resistance also allows for very low power dissipation, ensuring increased efficiency. The device also has a very small gate threshold voltage, meaning it can be triggered easily and precisely.
The FCA16N60_F109 is well-suited for various types of power supplies, audio amplifiers, switching circuits, and motor controls, to name a few. The low gate threshold voltage allows it to be used in switch circuits and motor controls to offer more precise control. The low on-resistance ensures that power dissipated is minimized, improving the circuit’s efficiency. When used in audio amplifiers, the FCA16N60_F109 delivers superior sound quality and improved performance in terms of circuit power and noise level.
The working principle behind the FCA16N60_F109 is based on the behavior of a MOSFET. A MOSFET is an insulated gate field-effect transistor, in which the voltage between the gate and source terminals controls the current flowing through the device. When the gate-source voltage is increased beyond the device’s threshold voltage (VGSth), the gate of the FET is turned "on" and the current between the drain and source is allowed to flow. On the other hand, when the gate-source voltage drops below the threshold voltage, the gate of the FET is turned "off" and no current can flow between the drain and source.
In conclusion, the FCA16N60_F109 is a versatile single-channel MOSFET that is suited to various low to medium power applications. It can be used in power supplies, audio amplifiers, switching circuits, and motor controls for superior performance and power efficiency. The device relies on the operation of a MOSFET, where the current between the drain and source is controlled by the voltage between the gate and source. The FCA16N60_F109 is a great choice for those seeking a reliable and efficient FET for their low to medium power applications.
The specific data is subject to PDF, and the above content is for reference
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