FCP099N65S3

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The FCP099N65S3 is a high-performance annular and columnar field-effect transistor (FET) designed and manufactured by ON Semiconductor. It is an insulated-gate bipolar transistor (IGBT) that operates in the range of -65 volts, with a current rating of up to 9 amps (max). This FET can be utilized in various applications, including PWM, motor control, and power switching.

Application

The FCP099N65S3 is suitable for a wide range of applications, such as motor control, PWM control, and power switching. It is also suitable for use in automotive and industrial applications, as it is able to withstand high temperatures, up to 175°C. It also has high breakdown voltage (BVDSS) of 650 V, which makes it well-suited for applications requiring high voltage and high current. In addition, the FCP099N65S3 has very low on-state resistance of 0.065 Ω, making it very efficient. Furthermore, this FET also features fast switching speed, making it suitable for high-speed applications.

Working Principle

The working principle of the FCP099N65S3 FET involves the manipulation of electrons through an insulated gate. This transistor is designed with a source, gate and drain, and when a voltage is applied to the gate electrode, it forms a conducting channel between the source and drain. When the gate current changes, the conductivity of the channel also changes, thus allowing the device to be used as an electrical switch. As the FET is made from layers of semiconductor material, it is able to transduce the electrical signals from the gate to the drain, thus allowing for PWM speed, motor control, and power switching.

Conclusion

The FCP099N65S3 is a high-performance insulated-gate bipolar transistor (IGBT) designed for use in a variety of applications, including motor control, PWM control, and power switching. It has a wide range of operating temperature and breakdown voltage (BVDSS) of 650 V, making it suitable for high voltage and high current applications. Furthermore, its low on-state resistance of 0.065 Ω, as well as its fast switching speeds make it well-suited for high-speed applications. Finally, the FET works on the principle of manipulating electrons through an insulated gate, which creates an electric channel between the gate and the drain, while the layers of semiconductor material transduce the electrical signal to the gate.

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