Allicdata Part #: | FCP190N60E-ND |
Manufacturer Part#: |
FCP190N60E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V TO220-3 |
More Detail: | N-Channel 600V 20.6A (Tc) 208W (Tc) Through Hole T... |
DataSheet: | FCP190N60E Datasheet/PDF |
Quantity: | 6 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 208W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3175pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
Series: | SuperFET® II |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20.6A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCP190N60E is a high-voltage NanCoolMOS N-Channel MOSFET produced by Infineon Technologies. It has a wide range of applications and is used in areas such as power electronics, motor control and automotive, as well as telecoms applications. This product is especially suitable for AC/DC power conversion and is rated for up to 600V. In this article, we take a closer look at the applications and working principle of the FCP190N60E.
The FCP190N60E has a die size of 2.29 x 2.59mm and is available in standard TO-247 packages. It has a RDS(on) at Tj = 25C of only 4.6mΩ which makes it ideal for use in power electronics applications. With a maximum TS of 175C, it is reliable and robust and can be used in the toughest of operating environments. It also features integrated temperature sensing, which helps to ensure optimum operation over a wide range of temperatures.
In terms of its applications, the FCP190N60E is ideal for use in DC/DC converters, AC/DC converters, and inverters. It can be used to switch power in an efficient and reliable way, and is particularly suitable for applications operating at high temperatures. The FCP190N60E is also suitable for controlling power in motor control and automotive applications, as well as in telecoms.
In terms of its working principle, the FCP190N60E operates as a voltage controlled semiconductor switch. It is constructed from four layers of silicon and its N-Channel design makes it suitable for use in high voltage applications. The FCP190N60E consists of a gate, a drain, a source and a substrate. When a voltage is applied to the gate, it creates an electric field which causes charge carriers (electrons and holes) to be attracted. This causes a current flow between the source and the drain.
The FCP190N60E has a typical threshold voltage of 4V, which means that it needs to be supplied with at least 4V in order to start conducting. The device is able to provide excellent on-state resistance and switching performance while dissipating very low levels of power in its off-state.
The FCP190N60E is a versatile and reliable device which is suitable for a range of power electronics applications. With its integrated temperature sensing, wide range of applications and robust design, it is an ideal choice for many types of power conversion and control applications.
The specific data is subject to PDF, and the above content is for reference
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