FDA20N50F

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The FDA20N50F is a Field-Effect Transistor (FET) with an isolated package. FETs are transistors used as amplifiers and switches that operate differently from the common BJT (Bipolar Junction Transistor). The unit is a single N-channel MOSFET recommended for switching applications. It has an array of 20 pins in its surface-mount package and carries a drain-source blocking voltage of 500V. Additionally, it has a drain current (IDA) of 20A.

FETs are three-terminal devices composed of source, gate, and drain. These terminals are considered as “control” and “output”, respectively. A small voltage applied between the source and gate controls the flow of electrons from source to drain. FETs are considered to be superior to BJTs in regards to speed, linearity, and temperature stability. Unlike BJTs, they can also easily be integrated on larger circuits due to the fact that their gates don’t require any base current.

The FDA20N50F is typically used in less critical applications such as motor, lighting, and general purpose load switching. It can be used in power management circuits that increase efficiency while increasing the power density. It is also suitable for use in a variety of switching applications including applications in the Automotive, Audio, and Lighting Markets. Additionally, it is a good fit for applications that require low on-state resistance, high speed switching, and ruggedness in thermal and electrical characteristics.

This FET has an operation temperature range between -55°C and 175°C, P-D (RDS) of 0.02 Ohms, and a Gate Charge (QG) of 140 nC. It has maximum drain-source breakdown voltage of 500V, continuous drain current of 20A, and offers reliable and fast switching. Apart from its electrical characteristics, the FDA20N50F complies with the most rigorous environmental requirements such as Underwriters Laboratories (UL) 970A and CSA C22.2 No.223-2005 standards.

The FET draws its control voltage from the Gate to control the current flowing between Source and Drain. By applying a control voltage (VGS) the FET will activate and current (ID) will start flowing through it. The FET can be used in two modes, being either depletion or enhancement mode. In Depletion mode, the FETs are normally activated with gate voltage, while in Enhancement mode, gate voltage is used to deactivate the FET. This transistor exhibits lower reverse gate leakage current than BJTs, reducing the risk of a short in the circuit.

The FDA20N50F, is a great choice for various analogue systems where the drain current is needed, for example for LED lighting, dimming control, switching and motors. Due to its low on-state resistance, low gate charge, good thermal stability and tight-tolerance, high-speed switching, it is widely used in various high-quality applications such as industrial automotive, audio and lighting.

In conclusion, the FDA20N50F MOSFET is a great choice for various analogue systems where the drain current is needed. It can be used in a variety of switching applications including applications in the Automotive, Audio, and Lighting Markets. Additionally, it has a lower reverse gate leakage current than BJTs, reducing the risk of a short in the circuit. Apart from its electrical characteristics, the FDA20N50F complies with the most rigorous environmental standards. Its combination of features make it an ideal choice for high-performance applications.

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