FDA24N50 Allicdata Electronics
Allicdata Part #:

FDA24N50-ND

Manufacturer Part#:

FDA24N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 24A TO-3PN
More Detail: N-Channel 500V 24A (Tc) 270W (Tc) Through Hole TO-...
DataSheet: FDA24N50 datasheetFDA24N50 Datasheet/PDF
Quantity: 533
Stock 533Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 270W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Series: UniFET™
Rds On (Max) @ Id, Vgs: 190 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FDA24N50 is a high voltage, fast switching, and low on-resistance N channel power MOSFET that is primarily used for electronic and power conversion applications. It features a very small package size and low on-resistance. The FDA24N50 is suitable for use in applications including switch mode power supplies, dc-dc converters and high current switching circuits. This MOSFET is capable of switching large currents at very high data rates, making it an ideal choice for applications that require speed, reliability, and performance.

The FDA24N50 is a high voltage power MOSFET, which means it operates at a higher voltage than a standard power MOSFET. It has an extremely low on-resistance and is capable of operating at a very high frequency. Additionally, the FDA24N50 utilizes P-channel enhancement type MOSFETs with a drain-gate voltage of -20 V. This MOSFET is also capable of operating in power up to 50W and is ideal for applications that require a high switching speed and low on-resistance. This MOSFET is most commonly used in switching power supplies, dc-dc converters and high current switching applications.

The working principle of the FDA24N50 is based on the principle of transistor action. The device consists of an n-channel MOSFET, which has been formed on a silicon chip between two metal contacts. The device operates as a switch, which is activated when a potential is applied to the gate of the device. When a potential is applied to the gate of the device, it will cause the conducting channel to be formed between the source and the drain. The drain-source current will then flow through the conducting channel, allowing the device to be switched on.

The application field of the FDA24N50 is wide and versatile. This MOSFET is ideal for a number of different types of power conversion applications and has led to widespread use in the industry. The FDA24N50 is most commonly used in switching power supplies, dc-dc converters, and high current switching applications. Additionally, the device is also used in applications such as motor control, display drivers, lighting, automotive electronics, and communications systems.

In conclusion, the FDA24N50 is a high voltage, fast switching, and low on-resistance N channel power MOSFET that is used for a variety of different power conversion applications. It is capable of switching large currents at very high data rates, making it an ideal choice for applications that require speed, reliability, and performance. The device is widely used in a number of industries, including switching power supplies, dc-dc converters, and high current switching applications.

The specific data is subject to PDF, and the above content is for reference

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