FDD18N20LZ

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FDD18N20LZ Application Field and Working Principle
The FDD18N20LZ is a silicon-based field effect transistor (FET) with a metal oxide semiconductor (MOS) structure, commonly referred to as a single MOSFET. It is commonly used in switching applications, such as power converters, power amplification and power management. The FDD18N20LZ also provides frequency/temperature compensation in electronic circuits.

The main purpose of the FDD18N20LZ is to act as a switch for controlling large amounts of electric current and power. The transistor operates in an “on” or “off” state depending on the voltage applied to its gate terminal. When the gate voltage is positive, the MOSFET is “on” and will conduct current from the drain to the source. When the gate voltage is negative, the FET is “off”, blocking current from the drain to the source. By controlling the voltage applied to the gate terminal, the MOSFET can be used to control the flow of current and hence, power, in a circuit.

As with all MOSFETs, the FDD18N20LZ has an intrinsic body diode that provides reverse voltage protection. This body diode allows reverse current to flow, but blocks forward current, thus protecting the MOSFET from damage due to reverse voltage. Additionally, the FDD18N20LZ has a power drain Feature (FOD), which allows the current to be reduced during a brief over-current condition. This feature helps protect the FET from damage due to heavy load conditions.

One of the main advantages of the FDD18N20LZ is its capability to operate in high operating temperature ranges from -55 deg C to 175 deg C. This makes it suitable for use in a variety of harsh or high-temperature environments. Additionally, the FDD18N20LZ has a high current handling capability, with up to 18A continuous and 25A peak drain current. This makes it suitable for use in switching applications, such as brushless DC motor control, power converters and power amplifiers.

The FDD18N20LZ also has several features that make it suitable for use in high frequency/high speed applications including a low gate charge of 2.6nC and a low gate-drain capacitance of 0.17pF. Additionally, its high-speed switching capability makes it ideal for high-frequency circuits such as RF or high-speed digital circuits.

Overall, the FDD18N20LZ is a versatile MOSFET that provides a wide range of capabilities for switching and power control applications. Its capability to operate over a wide temperature range and its high current handling capability make it suitable for a variety of applications. It’s excellent high-frequency switching properties also make it ideal for high-speed digital and RF circuits.

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