
Allicdata Part #: | FDMB2308PZTR-ND |
Manufacturer Part#: |
FDMB2308PZ |
Price: | $ 0.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH MLP2X3 |
More Detail: | Mosfet Array 2 P-Channel (Dual) Common Drain 800... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.54000 |
10 +: | $ 0.52380 |
100 +: | $ 0.51300 |
1000 +: | $ 0.50220 |
10000 +: | $ 0.48600 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) Common Drain |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 5.7A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 3030pF @ 10V |
Power - Max: | 800mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-MLP (2x3) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDMB2208PZ is a versatile and reliable-performing array chip, composed of three N-Gate MOSFETs (N-Channel Metal Oxide Semiconductor Field Effect Transistor) with an internal structure that can be used for three different purposes. The FDMB2208PZ is designed for applications where it can be used to drive linear DC/DC converters, as a power FET for use as a ‘Switch’ to control the voltage of an electrical circuit, or as an H-Bridge driver. For example, the FDMB2208PZ can be used in the driving of robots, motor control and overload protection in various kinds of electrical equipment.
The working of the FDMB2208PZ is simple and easy to understand. When a gate voltage higher than the threshold voltage VGS (th) is applied to the gate, the MOSFET turns on. This is due to the holes and electrons in the P-type source being attracted to the gate and creating an electrical current. The current is then passed through the drain and drain region to the current source, and the resistance between the gate and the source determines what voltage the gate needs to be before it is activated.
In addition to its above-mentioned application field, The FDMB2208PZ can also be used in reverse voltage protection, on/off switching, current limiting, and in power supplies. It can provide better thermal resistance, strong electrostatic discharge protection, and longer life for the product it is used in. Furthermore, the device can be easily controlled and monitored without the need for complex circuitry.
One the key benefits to using the FDMB2208PZ is its low ON resistance which gives it the edge over other devices in its class. This high ON resistance reduces conduction losses and allows higher currents to be achieved with lower power consumption. This ability to handle high currents helps in providing a greater amount of protection against overheating, or from the device being overloaded.
Moreover, the FDMB2208PZ also has a very low input capacitance, which defines its switching speed. The low input capacitance provides faster switching speeds and reduces the circuit complexity which is essential in making the device cost-effective. It also helps in providing better signal integrity as the switching speeds can reach up to 100kHz.
In conclusion, the FDMB2208PZ is a versatile, useful and user friendly array chip, ideal for use in many applications. Its low ON resistance, low input capacitance and fast switching speeds make it the perfect choice for powering a multitude of applications, while its ability to handle high current loads safely and reliably make it the perfect choice for providing overload protection in any circuit. As such, it is an excellent choice for motor control and power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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