FDMB668P Discrete Semiconductor Products

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The FDMB668P is a single depleted junction field effect transistor (FET) used in applications including communications and power control. FETs are three-terminal semiconductor devices in which the current flowing between the drain and source terminals can be controlled by the voltage applied to the gate terminal. This voltage-controlled current flow consists of electrons, which form a type of electric current known as a “carrier” — hence the other name for FETs: field-effect transistors (FETs).

The FDMB668P is a single FET device designed with a depleted junction structure that offers reliable switching performance. It is a “single” type FET, meaning it only has one gate. The “depleted junction” structure allows it to be used in applications that require high-speed switching and complex load requirements. Additionally, the device is designed to operate at very low gate voltages, with minimal switching power requirements.

One of the main advantages of the FDMB668P is its low on-resistance. This feature makes the device suitable for applications where a high-power transfer is required with very low energy loss in the form of heat. The device has an on-resistance of about 0.4 ohms, which is relatively low for a FET. This feature is particularly beneficial in power control applications.

The FDMB668P also has the advantage of being able to withstand large-voltage swings. This makes it suitable for applications where a high-voltage AC voltage source is present. The device can withstand up to a 50-volt differential voltage and can switch in excess of 10A. This makes it well suited for motor applications as well as for general switching.

The FDMB668P is also hermetically-sealed, which is useful in applications where airtight operation is necessary. The device is designed to withstand temperatures ranging from -55 to +150 degrees Celsius. It also has a wide operating temperature range, which is beneficial in temperature-sensitive applications.

The working principle of the FDMB668P can be explained using an example of a typical power control application. In this type of application, a low-voltage signal is passed to the gate terminal of the FDMB668P, which in turn controls the voltage applied to the drain and source terminals. This process enables the current flow between the source and drain to be controlled. By controlling the voltage, the current can be effectively switched between the source and drain terminals.

The FDMB668P is a versatile field effect transistor that offers many advantages in a wide range of applications. Its low on-resistance and ability to withstand high-voltage differentials make it suitable for a variety of applications including motor switching, power control, communications, and more. Additionally, its hermetic sealing offers superior protection against dust and moisture. The device’s wide operating temperature range offers reliable performance in a variety of conditions.

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