FDMB3900AN Allicdata Electronics
Allicdata Part #:

FDMB3900ANTR-ND

Manufacturer Part#:

FDMB3900AN

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 25V 7A 8-MLP
More Detail: Mosfet Array 2 N-Channel (Dual) 25V 7A 800mW Surfa...
DataSheet: FDMB3900AN datasheetFDMB3900AN Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 13V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDMB3900AN Application Field and Working Principle

The FDMB3900AN is one of the most commonly used application fields for FETs, MOSFETs, and arrays, due to its high performance and efficiency. The FDMB3900AN is a field-effect transistor array that is capable of amplifying high-power signals. It is made of a transparent gate oxide and a layer of thermally-activated silicon material that is used to create a field effect. The FDMB3900AN has been praised for its high sensitivity, wide operating temperature range, and low power dissipation. It is also highly reliable, making it an ideal choice for applications in harsh environments.

The FDMB3900AN is often used in applications ranging from networking, automotive, and control to audio systems. In networking, the FDMB3900AN is used to amplify high-speed and high-power signals. In automotive applications, the FDMB3900AN is used to amplify audio signals and to provide a highly secure environment. For control systems, the FDMB3900AN is often used for digital signal frequency scaling and for low-voltage switching. In audio systems, the FDMB3900AN is used to amplify and to filter acoustic signals.

The FDMB3900AN works through the application of alternating current. The alternating current causes a voltage to be induced within the gate oxide, resulting in the generation of a field-effect. This field-effect semi-conducts electrons, allowing the device to act as a semiconductor-level amplifier. This transistors response to alternating signals allows it to amplify high-level power signals. The FDMB3900AN is also capable of operating in high temperatures due to its use of the thermal-activated silicon layer.

The FDMB3900AN is an ideal choice for applications that require high-power signal amplification in harsh environments. Its high sensitivity and low power dissipation makes it well suited for applications requiring long periods of uninterrupted operation. Additionally, its wide operating temperature range and thermal-activated architecture allow it to operate reliably in conditions that would otherwise affect other electronic components. With these features, the FDMB3900AN is a great choice for engineers looking to use FETs, MOSFETs and arrays for their applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FDMB" Included word is 7
Part Number Manufacturer Price Quantity Description
FDMB506P ON Semicondu... 0.0 $ 1000 MOSFET P-CH 20V 6.8A 8MIC...
FDMB668P ON Semicondu... 0.0 $ 1000 MOSFET P-CH 20V 6.1A MICR...
FDMB3900N ON Semicondu... -- 1000 INTEGRATED CIRCUITMosfet ...
FDMB3800N ON Semicondu... -- 9000 MOSFET 2N-CH 30V 4.8A MIC...
FDMB3900AN ON Semicondu... -- 3000 MOSFET 2N-CH 25V 7A 8-MLP...
FDMB2307NZ ON Semicondu... -- 1000 MOSFET 2N-CH 6-MLPMosfet ...
FDMB2308PZ ON Semicondu... -- 1000 MOSFET 2P-CH MLP2X3Mosfet...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics