Allicdata Part #: | FDMB3900ANTR-ND |
Manufacturer Part#: |
FDMB3900AN |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 25V 7A 8-MLP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 25V 7A 800mW Surfa... |
DataSheet: | FDMB3900AN Datasheet/PDF |
Quantity: | 3000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 7A |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 890pF @ 13V |
Power - Max: | 800mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-MLP, MicroFET (3x1.9) |
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FDMB3900AN Application Field and Working Principle
The FDMB3900AN is one of the most commonly used application fields for FETs, MOSFETs, and arrays, due to its high performance and efficiency. The FDMB3900AN is a field-effect transistor array that is capable of amplifying high-power signals. It is made of a transparent gate oxide and a layer of thermally-activated silicon material that is used to create a field effect. The FDMB3900AN has been praised for its high sensitivity, wide operating temperature range, and low power dissipation. It is also highly reliable, making it an ideal choice for applications in harsh environments.
The FDMB3900AN is often used in applications ranging from networking, automotive, and control to audio systems. In networking, the FDMB3900AN is used to amplify high-speed and high-power signals. In automotive applications, the FDMB3900AN is used to amplify audio signals and to provide a highly secure environment. For control systems, the FDMB3900AN is often used for digital signal frequency scaling and for low-voltage switching. In audio systems, the FDMB3900AN is used to amplify and to filter acoustic signals.
The FDMB3900AN works through the application of alternating current. The alternating current causes a voltage to be induced within the gate oxide, resulting in the generation of a field-effect. This field-effect semi-conducts electrons, allowing the device to act as a semiconductor-level amplifier. This transistors response to alternating signals allows it to amplify high-level power signals. The FDMB3900AN is also capable of operating in high temperatures due to its use of the thermal-activated silicon layer.
The FDMB3900AN is an ideal choice for applications that require high-power signal amplification in harsh environments. Its high sensitivity and low power dissipation makes it well suited for applications requiring long periods of uninterrupted operation. Additionally, its wide operating temperature range and thermal-activated architecture allow it to operate reliably in conditions that would otherwise affect other electronic components. With these features, the FDMB3900AN is a great choice for engineers looking to use FETs, MOSFETs and arrays for their applications.
The specific data is subject to PDF, and the above content is for reference
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