FDMQ8203

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The FDMQ8203 is an integrated logic n-channel enhancement mode power field effect transistor (FET) array constructed with TrenchFET power MOSFET technology. This device offers high performance, high quality, and low on-state resistance with minimal capacitance. It is typically used as a feedback and level-shifting device to drive MOSFETs and other power FETs.

This device is suitable for DC-DC and AC-DC conversion applications including DC/DC converters, power management systems, power factor correction circuits, high density point-of-load converters, and other applications requiring low on-state resistance, low capacitance, and high performance. The FDMQ8203 is an integrated array of four n-channel MOSFETs with the same gate-source threshold voltage and features four low on-state resistance, low capacitance, and high breakdown voltage.

The FDMQ8203 is designed for use in voltage-mode and current-mode control applications as well as in pulse-width modulation (PWM) circuits. It is ideal for applications requiring low input capacitance and low on-state resistance. The array also includes a fast switch turn-on current that is proportional to the gate drive voltage, providing faster switching speed and superior response times without compromising reliability.

The FDMQ8203 features an enhanced thermal performance, improved Miller capacitance, and fast turn-off capabilities. Its fast switch turn-off current is proportional to the gate voltage, allowing for adjustable power dissipation. The array provides an optimized dynamic response for both voltage and current-mode designs, enabling improved performance and reliability in a wide variety of high power applications.

Its integrated protective circuitry includes current and temperature shutdown, undervoltage protection, and protection from excess voltage stress. All four devices are rated to handle higher current, allowing safe operation under a wider range of applications.

The FDMQ8203 also includes a dual-polarity common-source gate driver to achieve fast switching speeds and is suitable for logic level and high-side switching applications. The integrated driver is also capable of driving balanced half bridge circuits. The device can be used with a variety of other power MOSFET arrays, providing a complete solution for power management.

The FDMQ8203 offers excellent protection against switching transients and is suitable for a variety of rugged applications, particularly in automotive and industrial applications. Its integrated circuitry is designed to ensure reliable operation under extreme temperatures and conditions. The device also features a reduced switching time and improved efficiency for high-speed, high-frequency, and high-power applications.

In summary, the FDMQ8203 is an ideal choice for driving and controlling MOSFETs and other power FETs. It has low on-state resistance and capacitance, fast turn-on and turn-off currents, and integrated protection against short-circuit and overvoltage conditions. Additionally, the device offers excellent thermal performance, fast response times, and improved reliability suitable for a variety of applications.

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