Allicdata Part #: | FDMQ8403TR-ND |
Manufacturer Part#: |
FDMQ8403 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 4N-CH 100V 3.1A 12-MLP |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 100V 3.1A 1.9W... |
DataSheet: | FDMQ8403 Datasheet/PDF |
Quantity: | 1000 |
Series: | GreenBridge™ PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 215pF @ 15V |
Power - Max: | 1.9W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 12-WDFN Exposed Pad |
Supplier Device Package: | 12-MLP (5x4.5) |
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The FDMQ8403 are p-channel high-side power field-effect transistors suitable for applications in power management and motor control applications. The FDMQ8403 consists of four transistors, each of which has multiple gates, allowing it to be independently switched on and off. It is suitable for use in domestic and industrial applications, and can provide up to 5A of output current. The FDMQ8403 array is designed to provide fast switching speeds, low power dissipation, and high gate immunity.
The FDMQ8403 is designed to provide high-side power control via a low-side gate drive. This means that the device can be used to simultaneously switch on and off a number of power supply lines, and thus provide full power control of the connected device. The FDMQ8403 is capable of driving up to four loads, each of which can be independently switched on and off.
The FDMQ8403 uses MOSFETs to switch the output power supply lines. The device includes four MOSFETs, each of which has a gate terminal connected to a separate control input. A high enable signal applied to a gate terminal switches the corresponding MOSFET on, while a low enable signal switches it off. The enable inputs allow the FDMQ8403 to be used in a wide range of applications, including automotive and industrial control systems, home electronics, and other applications.
The working principle of the FDMQ8403 is based on the bi-directional nature of MOSFETs. When the enable signal is high, current flows in both directions through the source and the drain terminals of the MOSFET. This causes a voltage drop across the drain, which is detected by the FDMQ8403 and used to control the switching states of the device. When the enable signal is low, no current flows through the MOSFET, and the device will remain in its ‘off’ state.
The FDMQ8403 is also designed to provide protection against overvoltage. In order to prevent the device from switching on and off at the same time, the device will be disabled if any of the enable inputs are over-voltaged. This can be useful in preventing damage to the device due to incorrect wiring. The FDMQ8403 also provides protection against reverse voltage and overcurrent.
The FDMQ8403 is designed for use in a wide range of applications, and is suitable for use in domestic and industrial power control applications. It is particularly suitable for use in automotive and industrial control systems, home electronics, and motor control systems. The device can be used in combination with other components to provide protection against overvoltage, reverse voltage, and overcurrent.
The specific data is subject to PDF, and the above content is for reference
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