Allicdata Part #: | FDMQ86530LTR-ND |
Manufacturer Part#: |
FDMQ86530L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 4N-CH 60V 8A MLP4.5X5 |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 60V 8A 1.9W Su... |
DataSheet: | FDMQ86530L Datasheet/PDF |
Quantity: | 1000 |
Series: | GreenBridge™ PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Rds On (Max) @ Id, Vgs: | 17.5 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2295pF @ 30V |
Power - Max: | 1.9W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 12-WDFN Exposed Pad |
Supplier Device Package: | 12-MLP (5x4.5) |
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The FDMQ86530L is a MOSFET array specifically designed for applications in power conversion circuits. It is a device that can be used to increase the efficiency of a circuit by allowing the circuit to switch faster when switching load currents. It is made up of 20 independent n-channel MOSFETs in a single package, with each MOSFET having an on-resistance of 4.0 mΩ, and a 20 V gate-to-source voltage rating.
The FDMQ86530L is useful for applications requiring fast switching speeds, low on-resistance, and low gate drive power requirements. In addition, it has a high gate threshold voltage (Vth) and low leakage current (Ileak) that help to reduce power dissipation due to parasitic elements. In addition, the device is designed to ensure an excellent thermal characteristics, providing excellent thermal protection from short-term, intermittent overloads. The FDMQ86530L is available in several package types, including SOIC, TSSOP, and DIP.
The FDMQ86530L’s main application field is circuit switching. It is used in power converters to switch load currents when a pulse, or a large current load, is applied. The FDMQ86530L also finds applications in motor and motor control applications, where fast switching characteristics are important, as well as in power management, high intensity lighting, and high-speed communication systems.
The working principle of the FDMQ86530L is quite simple. It is a MOSFET array, which is composed of 20 individual n-channel MOSFETs in a single package. When a current is applied to the gate of the MOSFET, the channel beneath it is opened, allowing conduction between drain and source. When the gate is turned off, the channel is closed, blocking the current.
As an example of the switching process, consider a power supply that is conveying DC power to a load. A gate voltage is applied to the FDMQ86530L in order to increase the load current to the load. The gate voltage increases the current of each n-channel MOSFET, allowing the load current to increase. Once the gate voltage is removed, the FDMQ86530L will stop conducting, stopping the load current.
In summary, the FDMQ86530L is a MOSFET array specifically designed for applications in power conversion circuits. It is useful for applications requiring fast switching speeds, low on-resistance and gate drive power. It also has a high gate threshold voltage and low leakage current, ensuring excellent thermal characteristics and protection from short-term loads. It is quickly becoming a popular device for power converter and motor applications, as well as other specialized applications that require fast switching. Finally, its operating principle is simple and fast switching capabilities are easily achieved.
The specific data is subject to PDF, and the above content is for reference
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