Allicdata Part #: | FF225R12ME4B11BPSA1-ND |
Manufacturer Part#: |
FF225R12ME4B11BPSA1 |
Price: | $ 79.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1200V 225A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1200V ... |
DataSheet: | FF225R12ME4B11BPSA1 Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 72.51510 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 320A |
Power - Max: | 1050W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 225A |
Current - Collector Cutoff (Max): | 3mA |
Input Capacitance (Cies) @ Vce: | 13nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FF225R12ME4B11BPSA1 is an insulated gate bipolar transistor (IGBT) module. It is an insulated-gate field effect transistor used as a solid-state amplifier. It combines the improved voltage capabilities of a power MOSFET with the high current capacity of a bipolar transistor in a package that can be integrated into various industrial applications holding a number of advantages over traditional designs.
The FF225R12ME4B11BPSA1 is one of Infineon\'s Power modules. It is a high performance three-level neutral-point clamper module for wind turbine applications. It has a scalable concept with a fast switching IGBT4 and freewheeling diode in the same package. It is optimised for high efficiency and is suitable for use in medium power wind turbines.
The FF225R12ME4B11BPSA1 is based on the established IGBT3/ Diode module technology, featuring the latest hybrid H3 IGBT3 chip symbols. The module offers a higher level of integration and offers significant space saving compared to discrete designs. It has an improved cooling power image, and its highly automated production process ensures repeatable quality.
The FF225R12ME4B11BPSA1 has a blocking voltage up to 1250V and can deliver a current up to 225A (at 100KHz). The module operates with a junction temperature range from ?50°C to 150°C and junction temperature is useful up to 175°C. It has a soft switching mode of paralleling several modules in one application which leads to an improvement of efficiency up to 0.3%. Along with that, it is also extremely efficient at a minimum switching loss.
The working principle of the FF225R12ME4B11BPSA1 is based on the concept of insulated gate bipolar transistors, with two transistors in the same package – an NPN and a PNP. IGBTs are basically power transistors, with an insulated gate electrode (the N-channel MOSFET), and a bipolar current path (the PNP and NPN transistors). When current flows through the gate, it grips the PNP and then the NPN conduct, allowing them to conduct current through the collector-emitter path. This makes it possible to control the switching of high-power devices such as motors and relays.
The FF225R12ME4B11BPSA1 is an ideal choice for medium power wind turbine applications due to its low switching losses, high current handling capability and array of safety features. Its improved cooling power image and automated production process also increase the reliability of these devices. Additionally, this module is suitable for applications requiring three-level neutral point clamping, as it ensures accurate current distribution in applications such as rail traction.
The specific data is subject to PDF, and the above content is for reference
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