FF225R12MS4BOSA1

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Transistors - IGBTs - Modules

The FF225R12MS4BOSA1 is a high-performance insulated-gate bipolar transistor (IGBT) module designed to handle power electronics applications in a range of industries. Its optimized design has made it a popular choice for many applications needing an efficient and reliable power source. The FF225R12MS4BOSA1 contains a single IGBT on a temperature-sensitive substrate and is ideal for operating with a low-inductance busbar.

The FF225R12MS4BOSA1 is mainly used in application fields such as variable speed drives, inverter welders, solar inverters, and induction heaters. It features a very low VCE circuit voltage, superior current carrying capability, and an improved power factor based on the DBC (direct bonded copper) substrate. It can be used in three-phase or two-phase operation. The insulated gate structure also makes it very insensitive to overcurrents compared to other IGBTs.

The FF225R12MS4BOSA1 works on the principle of voltage-controlled current flow. The insulated gate allows the current to flow between the emitter and collector without the necessity of a mechanical switch. The voltage is applied to the gate of the IGBT, which then controls the current flowing between the emitter and collector. The current path is modulated by a logic signal and by adjusting the gate’s voltage. This makes it possible to obtain high switching frequencies and a very low EMI.

The FF225R12MS4BOSA1 features a low on-state impedance which reduces the thermal impedance. This increases the power output and reduces the self-heating of the IGBT. The switching characteristics of the module are excellent and it is equipped with a fast turn-off frequency and a fast turn-on time. It can be operated in both linear and switching applications, and the operation voltages are adjustable to different levels. The FF225R12MS4BOSA1 also has a soft turn-off and low reverse recovery time.

The FF225R12MS4BOSA1 is an ideal choice for applications that require an IGBT module with a high power-switching capability and enhanced performance. Its excellent thermal and electrical characteristics and low on-state impedance makes it a perfect choice for advanced power electronics applications. This module is designed to provide superior reliability, efficiency, and low-cost power switches.

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