Allicdata Part #: | FF225R12ME4BOSA1-ND |
Manufacturer Part#: |
FF225R12ME4BOSA1 |
Price: | $ 76.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1200V 225A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1200V ... |
DataSheet: | FF225R12ME4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 69.08580 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 320A |
Power - Max: | 1050W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 225A |
Current - Collector Cutoff (Max): | 3mA |
Input Capacitance (Cies) @ Vce: | 13nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FF225R12ME4BOSA1 is an Insulated Gate Bipolar Transistor (IGBT) module. This type of module is designed to be used in various industrial applications and is often used in place of a regular power transistors. The primary advantages of using this type of IGBT are its high efficiency, low power dissipation, good thermal resistance, and its ability to operate at high frequencies.
An IGBT module is composed of a port of insulated gate bipolar transistors (IGBTs) for carrying power. The IGBTs within this module contain a gate, a base, and an anode. They have a structure similar to the MOSFET (metal oxide semiconductor field effect transistor) but with an additional layer of insulation between the gate and the base. This layer of insulation is called a gate oxide layer, and it prevents the flow of current between the gate and the base when it is reverse biased. The IGBT module also contains a shield to protect its internal components against electrical and thermal disturbances. When in use, the IGBTs within the module will switch on and off quickly, allowing the user to control a large amount of power.
The FF225R12ME4BOSA1 module is a suitable choice for use in industrial applications. It can be used in AC or DC applications and is designed to provide high efficiency and low power dissipation. The module provides short-circuit protection and undervoltage protection, as well as other protection features to protect the module from adverse conditions. Its high frequency operation makes it suitable for use in applications where high frequency switching is required.
The FF225R12ME4BOSA1 module\'s working principle is based on the principle of current conduction through an insulated gate. When the gate voltage is positive, the IGBT\'s internal diode is turned on, allowing the current to flow from the anode to the cathode. When the gate voltage is negative, the IGBT\'s internal diode is turned off, preventing current flow.
The FF225R12ME4BOSA1 module provides a highly efficient way of controlling electrical power in industrial applications. It can be used in a variety of applications, such as motor control, power conditioning, and motion control. The module\'s efficiency and its ability to operate at high frequencies make it a good choice for many industrial applications.
The specific data is subject to PDF, and the above content is for reference
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