Allicdata Part #: | FF225R17ME4B11BOSA1-ND |
Manufacturer Part#: |
FF225R17ME4B11BOSA1 |
Price: | $ 102.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1200V 225A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1700V ... |
DataSheet: | FF225R17ME4B11BOSA1 Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 92.91030 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 340A |
Power - Max: | 1500W |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 225A |
Current - Collector Cutoff (Max): | 3mA |
Input Capacitance (Cies) @ Vce: | 18.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Introduction
FF225R17ME4B11BOSA1 is a type of IGBT (Insulated Gate Bipolar Transistor) module belonging to the range of Transistors – IGBTs – Modules. It is an important type of electronic device widely used in a variety of applications such as power switches, motor drivers, lighting systems, power converters, and various control applications. In this article, the application field and working principle of FF225R17ME4B11BOSA1 will be discussed in detail.
Application Field
FF225R17ME4B11BOSA1’s application field is mainly for medium and high power applications, such as motor drives, pumps, traction and high power switching circuits. It is not suitable for light-load and low power applications. It is often used in applications that require high switching speed due to its good switching performance, high efficiency, and low power loss. Furthermore, FF225R17ME4B11BOSA1 is also a popular choice in renewable energy projects as it has excellent thermal and overload protection features.
Working Principle
FF225R17ME4B11BOSA1 consists of two main parts – the collector and the emitter. The collector is connected to a DC power source and sends current through the emitter when it is turned on. During the process, the current flows from the collector to the emitter and the voltage builds up. This subsequently causes an electric field to form between the two terminals and an alternating current in the external load. The alternating current and voltage can then be controlled by altering the current or voltage levels of the power source. As the current or voltage is increased, the field strength between the two terminals also increases, resulting in an increase in power output.
Conclusion
To conclude, FF225R17ME4B11BOSA1 is a type of IGBT (Insulated Gate Bipolar Transistor) module belonging to the range of Transistors – IGBTs – Modules. Generally, it is used for medium and high power applications with excellent thermal and overload protection features. The working principle of FF225R17ME4B11BOSA1 is that the collector is connected to a DC power source and sends current through the emitter when it is turned on, which results in an alternating current in the external load and thus controlling the alternate current and voltage.
The specific data is subject to PDF, and the above content is for reference
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