Allicdata Part #: | FF225R17ME4PB11BPSA1-ND |
Manufacturer Part#: |
FF225R17ME4PB11BPSA1 |
Price: | $ 105.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED PWR ECONOD-4 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1700V 45... |
DataSheet: | FF225R17ME4PB11BPSA1 Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 96.26540 |
Series: | EconoDUAL™ 3 |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 450A |
Power - Max: | 20mW |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 225A |
Current - Collector Cutoff (Max): | 3mA |
Input Capacitance (Cies) @ Vce: | 18.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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。FF225R17ME4PB11BPSA1 is a module of Insulated Gate Bipolar Transistor (IGBT), which is a type of transistor often used in various industrial and consumer applications. It has been specifically designed to fulfill the needs of such applications and has a wide range of features and capabilities.
Application field
FF225R17ME4PB11BPSA1 IGBTs are mainly used in fields that require high-power electrical systems such as power systems, welding, and lighting. They can also be used in other industries such as automotive, aerospace, and medical applications. These transistors are designed to handle a wide range of power, from low current to high current, which makes them ideal for use in these fields.
Due to their robust design and high current handling capabilities,FF225R17ME4PB11BPSA1 IGBTs can be used in many different power systems. They are often used in power supplies, UPS systems, motor drives, and solar energy systems. They are ideal for applications that require high efficiency and reliability.
Working principle
FF225R17ME4PB11BPSA1 IGBTs are a type of transistor that works by controlling the flow of electric current. The device consists of two insulated gates and two diodes. The gates are connected in series so that one gate is used to control the flow of current in one direction and the other to control the flow of current in the opposite direction.
When an external voltage is applied to the gate, electric charges move from one gate to the other. The electric charges then form an electric field which pushes current through the transistor. This current flow is controlled by the external voltage. The more voltage that is applied, the greater the current flow. As such, the FF225R17ME4PB11BPSA1 IGBTs can be used to control the amount of power that is supplied to the system or device they are connected to.
FF225R17ME4PB11BPSA1 IGBTs also provide temperature protection due to their design. This is because they are insulated from the heat generated by the current flowing through the device. This helps to protect the system or device they are connected to from being damaged due to excessive heat.
FF225R17ME4PB11BPSA1 IGBTs are capable of producing high-speed switching speeds and have low on-state voltage and low switching losses. This makes them ideal for switching power applications. As such, they are often used in power supplies, motor drives, and solar energy systems.
FF225R17ME4PB11BPSA1 IGBTs are also very reliable, rugged, and durable. They are designed to handle a wide range of operating temperatures and can be used in many different applications. In addition, they are relatively easy to install and maintain, making them a great choice for industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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