FGA5065ADF

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	100A
Current - Collector Pulsed (Icm):	150A
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 50A
Power - Max:	268W
Switching Energy:	1.35mJ (on), 309µJ (off)
Input Type:	Standard
Gate Charge:	72.2nC
Td (on/off) @ 25°C:	20.8ns/62.4ns
Test Condition:	400V, 50A, 6 Ohm, 15V
Reverse Recovery Time (trr):	31.8ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3PN

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FGA5065ADF Application Field and Working Principle

Transistors are devices used to amplify or switch electronic signals, and are used in many different kinds of circuits. One specific type of transistor is an IGBT or Insulated Gate Bipolar Transistor. IGBTs have the advantage of lower losses and higher voltage capability when compared to regular BJTs or Bipolar Junction Transistors. The FGA5065ADF is a single IGBT which is used for a variety of applications.

Introduction to FGA5065ADF

The FGA5065ADF is a medium power IGBT developed by Fuji Electric. It is rated at 65A, but is also capable of over-current operation up to 90A. It has an integrated anti-saturation protection circuit, which ensures safe and efficient operation in over-current conditions. On the other hand, it also has an integrated emitter voltage clamp circuit that prevents the emitter voltage from exceeding the maximum allowable temperature.In addition, the FGA5065ADF has built-in parasitic diodes and isolation structure to reduce parasitic resonances. This gives FGA5065ADF excellent EMI performance in noisy environments. It also has an output feedback voltage clamp circuit to protect against power surges.

Applications of FGA5065ADF

The FGA5065ADF is a versatile IGBT that can be used in a wide range of applications. It is commonly used in motor drives and power supplies for appliances such as washing machines and refrigerators. It is also used in controllers for industrial equipment such as wind turbines and solar cells. In addition, it is used in high power and high frequency applications such as Tesla coils, mobile phones and navigation systems.

Working Principle of FGA5065ADF

The working principle of the FGA5065ADF is based on the principle of an Insulated Gate Bipolar Transistor (IGBT). It consists of two main components: an emitter, collector and a gate. The emitter and collector together form two junctions of the transistor, while the gate is insulated from the two junctions.When a forward voltage is applied across the emitter and collector, current flows through the two junctions, creating a path for current to flow between the emitter and collector. When the gate voltage is of the same polarity as the emitter voltage, it further reduces the voltage drop across the two junctions, allowing more current to flow.Conversely, when a reverse voltage is applied, it increases the voltage drop between the two junctions, stopping or reducing the current through the two junctions. Thus, the FGA5065ADF can be used as a switch or to amplify an electrical signal.

Conclusion

The FGA5065ADF is a single Insulated Gate Bipolar Transistor (IGBT) that offers many advantages for a variety of applications. It has several integrated circuits to protect against saturation and power surges. It also has a high current capability, making it suitable for motor drives and other high power applications. It is capable of producing high voltages and its built-in parasitic diodes and isolation structures ensure excellent EMI performance. Finally, its working principle allows it to act as a switch or an amplifier in different circuits.

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