FGA50S110P Discrete Semiconductor Products |
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Allicdata Part #: | FGA50S110P-ND |
Manufacturer Part#: |
FGA50S110P |
Price: | $ 2.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1100V 50A 300W TO3PN |
More Detail: | IGBT Trench Field Stop 1100V 50A 300W Through Hole... |
DataSheet: | FGA50S110P Datasheet/PDF |
Quantity: | 388 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 1.92780 |
10 +: | $ 1.73187 |
100 +: | $ 1.41895 |
500 +: | $ 1.20790 |
1000 +: | $ 1.01871 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 1100V |
Current - Collector (Ic) (Max): | 50A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 50A |
Power - Max: | 300W |
Switching Energy: | -- |
Input Type: | Standard |
Gate Charge: | 195nC |
Td (on/off) @ 25°C: | -- |
Test Condition: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
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The FGA50S110P is a transistor component manufactured by Toshiba. It falls within the category of insulated-gate bipolar transistors, more commonly referred to as an IGBT. An IGBT is a power semiconductor device, much like a bipolar junction transistor, but with a much higher switching speed and significantly reduced switching losses. The FGA50S110P is a single IGBT, meaning that there is only one junction between the collector and emitter of the device.
The FGA50S110P is commonly used in applications such as inverters, motor drives, and AC switching circuits. Its main characteristics include a high voltage rating with a break-over voltage of 800V and a collision voltage (VCE(sat)) of 2.3V at 600A. The FGA50S110P can handle peak currents of up to 20A. It has a maximum collector-emitter voltage of 1200V, a minimum collector-emitter saturation voltage of 1.2V and a maximum junction temperature of 150°C.
The operating principle of the FGA50S110P is similar to that of a traditional bipolar transistor. It has two circuit configurations – common emitter (CE) and common collector (CC) – which allow the FGA50S110P to be used for various types of circuit designs. In the CE configuration, the voltage between the collector and emitter terminals is lowest when the base current is highest. Conversely, in the CC configuration, the voltage between the collector and emitter terminals is highest when the base current is highest.
When an AC voltage is applied to the FGA50S110P, the transistor will pass current through its collector-emitter junction. This occurs when the voltage exceeds the break-over voltage of 800V and the base current has increased to the point where the voltage between the collector and emitter terminals drops to the collision voltage (VCE(sat)), typically 2.3V at 600A. The transistor then continues to conduct until either the current or the voltage drops below the maximum values.
The FGA50S110P is an important component in AC switching circuits, motor drives and inverters, due to its high switching speed, wide voltage ratings and low switching losses. It is also used in many industrial and automotive applications, including power bridges, solar concentrator systems and motor control circuits.
The specific data is subject to PDF, and the above content is for reference
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