FGA50N60LS Discrete Semiconductor Products |
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Allicdata Part #: | FGA50N60LS-ND |
Manufacturer Part#: |
FGA50N60LS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 100A 240W TO3P |
More Detail: | IGBT 600V 100A 240W Through Hole TO-3P |
DataSheet: | FGA50N60LS Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 240W |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 300V, 50A, 5.9 Ohm, 15V |
Td (on/off) @ 25°C: | 54ns/146ns |
Gate Charge: | 167nC |
Input Type: | Standard |
Switching Energy: | 1.1mJ (on), 3.2mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.8V @ 15V, 50A |
Current - Collector Pulsed (Icm): | 150A |
Current - Collector (Ic) (Max): | 100A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The FGA50N60LS is an IGBT (Insulated Gate Bipolar Transistor) built on a single chip, in a package that supports higher power in a smaller package size than standard devices. It is designed for high power, low voltage and low losses. Specifically, it is designed for applications including motor drives, power switching, lighting and UPS.
The FGA50N60LS is an ideal choice for applications where small size, elevated voltage and low losses are essential. It is ideal for high power applications such as motor drives, lighting, and uninterruptible power supplies (UPS).
The FGA50N60LS operates at a voltage range of 600V and offers an impressive current capacity of up to 50A. It also provides low conduction losses. The device also has a wide range of operating temperature ratings of –25°C to +150°C.
The FGA50N60LS is comprised of NPN and PNP bipolar transistors fabricated on the same chip. This design reduces the number of parts and provides a cost-effective solution for power switch applications. The device also has built-in gate protection circuitry and embedded gate protection diodes, which protect the devices in case of an inductive load switch-off.
The FGA50N60LS operates in the following three modes: the ON mode, OFF mode, and The Saturation mode. When the transistor is turned ON, the drain-source voltage is zero and the current from the drain to the source is at a maximum. In the Off mode, the drain-source voltage is elevated to a value where the current stops flowing. In the Saturation mode, the drain-source voltage is reduced to a value in which the IGBT is operating in its most efficient power delivery state.
The FGA50N60LS is well-suited for circuit applications that require rapid switching, making it popular in many industrial applications. It has a high input capacitance and exhibits low switching losses. Its low forward voltage drop also reduces switching losses. Furthermore, the device requires low gate drive current, has a fast turn-on/turn-off speed, and is capable of dissipating up to 150A of short circuit current.
The FGA50N60LS is also highly versatile, allowing for its use in many power switch applications. For instance, it can be used in buck-boost converters and in three-phase motor control. Additionally, the device can be used in buck, flyback and boost-flyback topologies.
In conclusion, the FGA50N60LS is an ideal IGBT for high power, low voltage and low losses applications. Its versatility, low conduction losses and cost-effectiveness makes it suitable for a wide range of power switching applications. Its thermal management is also excellent, making it a reliable choice for many industrial applications that require rapid switching.
The specific data is subject to PDF, and the above content is for reference
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