Allicdata Part #: | FGA50N100BNTDTU-ND |
Manufacturer Part#: |
FGA50N100BNTDTU |
Price: | $ 3.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1000V 50A 156W TO3P |
More Detail: | IGBT NPT and Trench 1000V 50A 156W Through Hole TO... |
DataSheet: | FGA50N100BNTDTU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 3.06180 |
10 +: | $ 2.75058 |
100 +: | $ 2.25376 |
500 +: | $ 1.91857 |
1000 +: | $ 1.61808 |
Specifications
Power - Max: | 156W |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 1.5µs |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Gate Charge: | 275nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.9V @ 15V, 60A |
Current - Collector Pulsed (Icm): | 100A |
Current - Collector (Ic) (Max): | 50A |
Voltage - Collector Emitter Breakdown (Max): | 1000V |
IGBT Type: | NPT and Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Description
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Introduction
FGA50N100BNTDTU is a state-of-the-art insulated gate bipolar transistor (IGBT) produced by Fairchild. It is a reliable high-efficiency switching device that is ideally suited for applications that require frequent switching operations. This chip allows the user to achieve fast switchting times while also providing a high degree of flexibility in terms of switching frequencies.Application Fields
FGA50N100BNTDTU can be applied to a wide variety of switching applications, including power conversion modules, motor drives, and AC to DC converters. It is also suitable for use in high frequency switching systems, such as systems operating at up to 1 MHz. In addition, FGA50N100BNTDTU can be used in applications where a high degree of noise immunity is required.Working Principle
The FGA50N100BNTDTU is based on a two-transistor technology that is capable of providing both very fast switching times, and high levels of drive current. This is achieved by combining a high current insulated gate bipolar transistor (IGBT) with a dual MOSFET structure. The high current IGBT is responsible for handling the majority of the switching, while the MOSFETs are used to provide additional current when needed.The switching action is controlled by a logic signal, which is used to set the appropriate levels of voltage at the gate of the IGBT. When this voltage is reached, the IGBT will switch on and the necessary current will be provided. When the logic signal is off, the IGBT will switch off, thereby disabling the flow of current.Conclusion
In conclusion, FGA50N100BNTDTU is a reliable and efficient high-frequency switching transistor that is ideally suited for applications that require fast switching times. It is also capable of providing high levels of noise immunity, making it ideal for use in high-noise environments. Finally, its two-transistor technology makes it very easy to control, making it a great choice for applications requiring frequent switching operations.The specific data is subject to PDF, and the above content is for reference
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