Allicdata Part #: | FGA50T65SHD-ND |
Manufacturer Part#: |
FGA50T65SHD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 650V 100A 319W TO-3PN |
More Detail: | IGBT Trench Field Stop 650V 100A 319W Through Hole... |
DataSheet: | FGA50T65SHD Datasheet/PDF |
Quantity: | 347 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 100A |
Current - Collector Pulsed (Icm): | 150A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 50A |
Power - Max: | 319W |
Switching Energy: | 1.28mJ (on), 384µJ (off) |
Input Type: | Standard |
Gate Charge: | 87nC |
Td (on/off) @ 25°C: | 22.4ns/73.6ns |
Test Condition: | 400V, 50A, 6 Ohm, 15V |
Reverse Recovery Time (trr): | 34.6ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
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The FGA50T65SHD is a single IGBT module designed for direct current (DC) and alternating current (AC) applications. It has a wide range of capabilities, including high current conducting capabilities and high temperature operability. This makes it a suitable choice for a variety of applications.
IGBTs are a type of transistor that combines the properties of a bipolar transistor and a field effect transistor. An IGBT consists of two conductive layers and one insulating layer. It acts as a switching device, allowing current to flow in one direction and blocking it from flowing in the other. This makes it highly efficient for certain applications, as it allows for more precise control of the current flow. IGBTs can be used in applications such as electric motor control, solar power storage, and other voltage regulating applications.
The FGA50T65SHD IGBT has a breakdown voltage of 650 V and a maximum collector current (IC) of 50A. It has a high surge capability, enabling it to handle short-term overloads of up to 2000 A. This makes it suitable for applications where a high current is needed for a short time such as induction heating. The module also has a wide operating temperature range, from -40°C to +175°C, making it suitable for use in extreme environmental conditions.
The FGA50T65SHD IGBT is designed to provide a low on-resistance. This means that when it is on, the current through the transistor is relatively low, which can improve efficiency and reduce losses. Additionally, the on-resistance of the FGA50T65SHD is temperature-compensated, meaning it remains stable over a wide range of temperatures. This ensures that the current is always kept low, even in extreme conditions.
The FGA50T65SHD IGBT is primarily used for motor control applications. It can be used in inverters, controllers, and other motor control systems. It is also suitable for applications such as DC-DC converters, AC/DC rectifiers, and AC/DC inverters. The IGBT can be used in bidirectional applications, and is capable of providing both braking and regenerative braking functions. This makes it ideal for applications that require both control and power.
The working principle of the FGA50T65SHD IGBT is quite simple. When a positive voltage is applied to the gate, electrons from the semiconductor material are pulled into the gate. This creates a conductive path between the base and the collector, allowing current to flow from the collector to the base. When the voltage is removed from the gate, the electrons are pushed out, blocking current from flowing. This is the basic principle behind IGBTs, and the FGA50T65SHD IGBT operates on the same principle.
In summary, the FGA50T65SHD IGBT is designed for direct current and alternating current applications. It is capable of delivering high currents at high temperatures, and can be used in applications such as motor control, solar power storage, and other voltage regulating applications. Its low on-resistance and temperature-compensated design makes it an ideal choice for many applications, and its working principle is based on the same principles as all other IGBTs.
The specific data is subject to PDF, and the above content is for reference
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