Allicdata Part #: | FJP13007H2TU-F080-ND |
Manufacturer Part#: |
FJP13007H2TU-F080 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TO220 HV FAST-SWITCHING NPN PWR |
More Detail: | Bipolar (BJT) Transistor NPN 400V 8A 4MHz 80W Thro... |
DataSheet: | FJP13007H2TU-F080 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 2A, 8A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 2A, 5V |
Power - Max: | 80W |
Frequency - Transition: | 4MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
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FJP13007H2TU-F080 is a type of bi-polar junction transistor (BJT) with single collector, a material which is commonly used as an active switching device in many circuit designs. It is one of the common choices for use in low frequency applications such as for signals around 100 MHz where it provides a reliable way to amplify signals and control the flow of current.
BJT transistors are used in two major categories of electronic connections: digital circuits and analog systems. In digital circuits, FJP13007H2TU-F080 is used as a switched element to indicate either a conducting or non-conducting state between two nodes of the circuit while in analog systems, it is used to amplify the potential difference between two nodes of the circuit. The most common application of this transistor is in switching analog signals, specifically in amplifying, shaping and otherwise manipulating the signal before it is outputted to the next stage. Thanks to its low on-resistance, FJP13007H2TU-F080 can be used for fast switching duty cycles and its low offset voltage makes it especially suitable for applications where high linearity is mandatory.
The working principle behind FJP13007H2TU-F080 BJT is based on PN junction. A BJT is essentially composed of two semiconductor layers sandwiched together by a thin layer of polysilicon. These layers are known as the collector, base and emitter. As electrons move from the emitter to the collector in the BJT, the transistor passes current from the collector to the emitter. This current flow is known as the transistor\'s collector current and can be changed with voltage applied to the base.
Besides its use in digital and analog electronics, FJP13007H2TU-F080 transistors can also be used in medical fields, especially in controlling the voltage levels and currents of devices used to monitor the performance of medical devices. Since the transistor\'s small current range and its low offset voltage makes it easier to accurately track the performance of medical devices, FJP13007H2TU-F080 has become an important contributor to the medical industry.
Aside from its industrial applications, FJP13007H2TU-F080 also finds use in robotics and automation as it helps to regulate and relay force or can provide timing for movements, often with sensors that detect movement, temperature, or other conditions. It can be used in relays, timers, motor starters, and other applications that require precise control of electric motors and other electromechanical devices.
In conclusion, FJP13007H2TU-F080 is a single collector bi-polar junction transistor suitable for use in both digital and analog electronics with applications ranging from the medical field to robotics and automation. Its low on-resistance and offset voltage make it the preferred choice of many engineers for precision control of current and for fast switching duty cycles.
The specific data is subject to PDF, and the above content is for reference
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