FJP13009H2

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FJP13009H2 is a type of single bipolar junction transistor (BJT) used in applications ranging from switching to amplifying and interfacing. It is a high-performance, medium-speed, low-power device that is used in many semiconductor and computer applications. Its most common applications include switching applications, audio and video amplifiers, and interfacing of digital logic systems.

The FJP13009H2 transistor functions by controlling the flow of current through a base-emitter junction when a small amount of current is allowed to flow through the base-emitter junction, the collector current is amplified. The ratio between the collector and base current is referred to as the current gain of the transistor. The transistor’s current gain can be adjusted by changing the size of the collector current. The stability of the current gain for the FJP13009H2 is approximately 100 at a collector current of 1 milliamp.

The FJP13009H2 is designed for use in a variety of high-speed applications. It is capable of operating at up to 6.2 MHz at the low power from 0.2 to 10V. It has a minimum collector-emitter voltage (Vce of 35V, a minimum operating temperature of -55°C, and a maximum power dissipation of 1W. The FJP13009H2 has a low input bias and offset currents, making it ideal for low power, high voltage applications.

In terms of its structure, the FJP13009H2 has a base (BE) with a boron emitter, an emitter (E), and a collector (C) with a nickel-plated cased. It features a PNPN layout with a Schottky-barrier diode connected to the collector, providing the transistor with a high-speed switching action. It has a collector-emitter breakdown voltage (BVceo) of 80V, a collector-base breakdown voltage (BVceo) of 150V, and a DC current gain (hFe) of 150. The FJP13009H2 also features an immunity to so-called latchup, providing enhanced protection from unexpected voltages.

When choosing a transistor for a particular application, it is important to consider the performance capabilities of the device. The FJP13009H2’s moderate current gain and fast switching speed, along with its low input biases, make it an attractive choice for many demanding applications. As with other single-transistor devices, it is important to select the right application to ensure proper performance.

In summary, the FJP13009H2 is a single, bipolar junction transistor (BJT) used in a variety of applications ranging from switching, to amplifying and interfacing. Its moderate current gain, high-speed switching speed, and immunity to latchup make it an attractive choice for many applications. Its design ensures that it is stable, reliable, and capable of performing at high speeds and low power with ease. Its versatility makes it an ideal choice for a variety of diverse applications.

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