Allicdata Part #: | FJP13007TU-ND |
Manufacturer Part#: |
FJP13007TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 8A TO220 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 8A 4MHz 80W Thro... |
DataSheet: | FJP13007TU Datasheet/PDF |
Quantity: | 474 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 2A, 8A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 5 @ 5A, 5V |
Power - Max: | 80W |
Frequency - Transition: | 4MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | FJP13007 |
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The FJP13007TU is a three-terminal NPN bipolar transistor with a built-in gold gate, made by Fairchild Semiconductor. It is a single transistor in the category of transistors, specifically of the bipolar (BJT) type. Its features and uses vary from ordinary transistors in terms of applications and power dissipation.
The FJP13007TU is designed for general purpose applications in voltage regulation, interfacing and switching applications. It offers high current capabilities of up to 25 amps, a low saturation voltage of 0.5 volts with a typical electrical gain of up to 400 and a maximum frequency of 200 kHz. The FJP13007TU features a gold gate and has a high gain bandwidth product of 1 GHz with a collector current rating of 15 amps.
The compact TO-220 package of the transistor is suitable for applications with limited space. It provides users with an excellent spread of temperature range over which the devices can operate. It has high junction temperature ratings of up to 175°C and provides excellent insulation characteristics that allow its use in direct-contact collector applications. The gold gate of the FJP13007TU is unique to this device, allowing heat dissipation and a high-yield gain.
In regards to its working principle, the FJP13007TU’s power gain is far superior to common transistors, relying on the collector and emitter current flow. It is designed for use in circuits that demand precise current regulation. The resistance provided by the collector junction is matched to the current level produced by the base. This resistance also helps to reduce the power lost due to power dissipation.
In switching applications, the FJP13007TU transistor can be used to switch high-current DC loads with a low saturation voltage. As a voltage regulator, it supplies accurate control over the output voltage. The relatively high gain of this transistor makes it ideal for applications where precise current regulation is required.
The FJP13007TU has two types of ratings, average junction temperature and peak collector current. The average junction temperature rating is the maximum temperature that the transistor can safely operate in, while the peak collector current rating is the maximum output current that can be safely supplied by the collector before damage is caused to the device. These ratings need to be kept in mind during the design of a circuit.
In conclusion, the FJP13007TU is a high-performance single bipolar transistor designed for a range of applications and power dissipation. It features a gold gate, impressive power gain and low saturation voltage, a compact package and high temperature ratings. With its built-in gold gate and high gain bandwidth, it is the perfect choice for circuits that require precise current regulation.
The specific data is subject to PDF, and the above content is for reference
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