Allicdata Part #: | FJP13009H2TU-ND |
Manufacturer Part#: |
FJP13009H2TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 12A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 12A 4MHz 100W Th... |
DataSheet: | FJP13009H2TU Datasheet/PDF |
Quantity: | 1985 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 12A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 3A, 12A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 5A, 5V |
Power - Max: | 100W |
Frequency - Transition: | 4MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | FJP13009 |
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The FJP13009H2TU, classified as a single bipolar junction transistor (BJT), is a type of semiconductor device which provides multiple functions such as switching, amplification, and voltage regulation. This semiconductor device is generally used in many applications such as amplifiers, digital circuits, and switching devices. It is important to note that this device must be used in a limited current and power range; it is neither suitable for very low current applications nor for extreme high current applications. The FJP13009H2TU is a field effect transistor (FET), meaning that it has an outer gate to control the flow of current.
The FJP13009H2TU transistor works on the principle of the transistor action. It consists of three terminals known as the emitter, base, and collector. To begin with, a current flows from the emitter to the base, formed by a circuit connecting the emitter and base. This current then enables electrons to just go through the P-N junction to the other side of the transistor. This process is known as forward bias. When the voltage on the base of the transistor is large enough, electrons flow into the collector terminal. This process is known as reverse bias. The combination of these two transmissions controls the flow of current through the transistor by modulating the collector voltage.
The FJP13009H2TU has several uses in various applications. It is widely used in digital circuits. Its ability to switch between on and off states with the help of its gate voltage makes it an ideal choice for designing digital circuits. Switching applications such as transistors switches and relays can also rely on the FJP13009H2TU. In addition, this device is used in amplifiers, as it amplifies weak signals and maintains flat response as well. Finally, its low voltage gain makes it suitable for voltage regulation in power supplies.
In conclusion, the FJP13009H2TU is a single bipolar junction transistor (BJT) device. It works on the principle of transistor action, making use of the forward and reverse bias processes. This transistor is generally used in the fields of digital circuits, amplifiers, switch applications, and voltage regulation. This device has a limited current and power range, thus necessitating proper selection and use.
The specific data is subject to PDF, and the above content is for reference
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