FJV3103RMTF Discrete Semiconductor Products |
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Allicdata Part #: | FJV3103RMTFTR-ND |
Manufacturer Part#: |
FJV3103RMTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJV3103RMTF Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | FJV3103 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors come in a variety of types, each with a different application field and working principle. FJV3103RMTF is a type of single, pre-biased bipolar junction transistor (BJT). It is used in high-speed applications, including broadband amplifiers, analog-to-digital converters, and high-frequency motor control.
Bipolar junction transistors (BJTs) work by allowing current to flow controlled by a base current, rather than simply switching between on and off like a field-effect transistor (FET). FJV3103RMTF is a single BJT with a pre-biased base. This means that the base-emitter junction is forward-biased and a positive current flows from the base to the emitter, allowing current to flow through the collector. This pre-biased BJT is useful in many high-voltage applications because its transistor is more reliable than an un-biased BJT.
FJV3103RMTF can achieve high frequency response and fast switching time. It has a high current gain of 49.9 dB with a slew rate of 7.5 V/μs. In addition, it has a high breakdown voltage of 800 V, allowing it to operate at high frequencies. This makes FJV3103RMTF ideal for many high-speed analog-to-digital converters and high-frequency motor control applications.
FJV3103RMTF is available in two different packages: TO247 and TO-220. The TO247 package is designed for high power applications and is suitable for use with heat sinks and protective enclosures. The TO-220 package is smaller, making it more suitable for tight spaces. Both packages are designed with a ceramic base for improved thermal conduction.
FJV3103RMTF also features a built-in safety diode to protect the device from overvoltage. This diode is placed between the emitter and the collector, and is capable of withstanding up to 1000 V. This feature makes FJV3103RMTF ideal for high-voltage applications with a risk of overvoltage, such as solar inverters and EV chargers.
In conclusion, FJV3103RMTF is a single, pre-biased bipolar junction transistor (BJT). It is suitable for high-speed applications, such as broadband amplifiers, analog-to-digital converters, and high-frequency motor control. It is available in two packages (TO247 and TO-220), and features a built-in safety diode for protection from overvoltage.
The specific data is subject to PDF, and the above content is for reference
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